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arXiv 1008.0458cond-mat.mtrl-scicond-mat.mes-hallcond-mat.stat-mechphysics.gen-ph
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声子霍尔效应的拓扑性质

Topological Nature of the Phonon Hall Effect

Lifa Zhang, Jie Ren, Jian-Sheng Wang, Baowen Li

摘要:

我们提供了一个拓扑的理解声子霍尔效应在拉曼自旋-声子耦合晶体。根据能带结构的Berry曲率,得到了声子霍尔电导的一般表达式。我们发现声子霍尔电导率随磁场的变化具有非单调性。此外,我们观察到声子霍尔效应的相变,这对应于带拓扑的突变,其特征在于整数陈数的变化。这可以用声子带的接触和分裂来解释。

英文摘要:

We provide a topological understanding on phonon Hall effect in dielectrics with Raman spinphonon coupling. A general expression for phonon Hall conductivity is obtained in terms of the Berry curvature of band structures. We find a nonmonotonic behavior of phonon Hall conductivity as a function of magnetic field. Moreover, we observe a phase transition in phonon Hall effect, which corresponds to the sudden change of band topology, characterized by the altering of integer Chern numbers. This can be explained by touching and splitting of phonon bands.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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