arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1007.4708cond-mat.mtrl-sci
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Mn掺杂对(Ga,Mn)As光学性质影响的系统研究

Systematic study of Mn-doping trends in optical properties of (Ga,Mn)As

T. Jungwirth, P. Horodyska, N. Tesarova, P. Nemec, J. Subrt, P. Maly, P. Kuzel, C. Kadlec, J. Masek, I. Nemec, V. Novak, K. Olejnik, Z. Soban, P. Vasek, P. Svoboda, Jairo Sinova

摘要:

本文系统地研究了(Ga,Mn)As外延层的光学性质,包括Mn_Ga替代掺杂。的生长和生长后退火程序进行了优化,以获得尽可能接近均匀的未补偿的(Ga,Mn)As混合晶体的膜的每个标称Mn掺杂。我们在中红外吸收光谱中观察到一个宽的最大值,其位置表现出普遍的蓝移增加锰掺杂。在可见光区,随着Mn掺杂量的增加,磁性圆二色性的一个峰发生蓝移。这些观察到的趋势证实,无序加宽的价带状态提供了一个更好的单粒子表示的电子结构的高掺杂(Ga,Mn)的金属导电比假设的费米能级钉扎在一个狭窄的杂质带的能谱。

英文摘要:

We report on a systematic study of optical properties of (Ga,Mn)As epilayers spanning the wide range of accessible substitutional Mn_Ga dopings. The growth and post-growth annealing procedures were optimized for each nominal Mn doping in order to obtain films which are as close as possible to uniform uncompensated (Ga,Mn)As mixed crystals. We observe a broad maximum in the mid-infrared absorption spectra whose position exhibits a prevailing blue-shift for increasing Mn-doping. In the visible range, a peak in the magnetic circular dichroism blue shifts with increasing Mn-doping. These observed trends confirm that disorder-broadened valence band states provide a better one-particle representation for the electronic structure of high-doped (Ga,Mn)As with metallic conduction than an energy spectrum assuming the Fermi level pinned in a narrow impurity band.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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