强耦合自旋量子比特系统中掺铋硅的量子相干性分析
Analysis of quantum coherence in bismuth-doped silicon: a system of strongly coupled spin qubits
摘要：
人们越来越关注铋掺杂硅（Si：Bi）作为使用磷掺杂硅（Si：P）的基于硅的量子信息处理（QIP）的充分研究的提议的替代物。在这里，我们专注于其强烈的超精细耦合的影响。特别是，我们详细分析的制度，最近的脉冲磁共振实验已经证明了潜在的数量级加速在量子门利用电子顺磁共振（EPR）禁止在高场的过渡。我们还提出了计算使用的现象学马尔可夫模型的电子自旋的退相干由于高斯时间磁场扰动的主方程。该模型量化了被识别为$df/dB=0$区域的某些“最佳工作点”的优点，其中$f$是过渡频率，其以频率最小值和最大值的形式出现。我们表明，在这样的区域，由于电子自旋的相互作用，在$z$方向（通常是绝热）的波动磁场的退相被完全删除。
英文摘要：
There is growing interest in bismuth-doped silicon (Si:Bi) as an alternative to the well-studied proposals for silicon based quantum information processing (QIP) using phosphorus-doped silicon (Si:P). We focus here on the implications of its anomalously strong hyperfine coupling. In particular, we analyse in detail the regime where recent pulsed magnetic resonance experiments have demonstrated the potential for orders of magnitude speedup in quantum gates by exploiting transitions that are electron paramagnetic resonance (EPR) forbidden at high fields. We also present calculations using a phenomenological Markovian master equation which models the decoherence of the electron spin due to Gaussian temporal magnetic field perturbations. The model quantifies the advantages of certain "optimal working points" identified as the $df/dB=0$ regions, where $f$ is the transition frequency, which come in the form of frequency minima and maxima. We show that at such regions, dephasing due to the interaction of the electron spin with a fluctuating magnetic field in the $z$ direction (usually adiabatic) is completely removed.
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