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arXiv 1006.0929cond-mat.supr-con
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LaFeAsO表面驱动电子结构的角分辨光电子能谱研究

Surface-driven electronic structure in LaFeAsO studied by angle resolved photoemission spectroscopy

Chang Liu, Yongbin Lee, A. D. Palczewski, J. -Q. Yan, Takeshi Kondo, B. N. Harmon, R. W. McCallum, T. A. Lograsso, A. Kaminski

摘要:

我们用角分辨光电子能谱(ARPES)测量了铁砷母体化合物LaFeAsO的电子结构。通过与全势线性增广平面波计算的比较,我们表明,通过ARPES测量的特大伽玛空穴袋来自于样品表面的电子结构。在此基础上,我们讨论了能带结构的强偏振依赖性和M点附近的温度依赖性的类空穴带。这两个现象为表面驱动电子结构的存在提供了新的证据。

英文摘要:

We measured the electronic structure of an iron arsenic parent compound LaFeAsO using angle resolved photoemission spectroscopy (ARPES). By comparing with a full-potential Linear Augmented PlaneWave calculation we show that the extra large Gamma hole pocket measured via ARPES comes from electronic structure at the sample surface. Based on this we discuss the strong polarization dependence of the band structure and a temperature-dependent hole-like band around the M point. The two phenomena give additional evidences for the existence of the surface-driven electronic structure.

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