使用$δ$掺杂的GaAs晶体管的声子介导的高灵敏度光子数分辨探测器
Highly sensitive, photon number resolving detectors mediated by phonons using $δ$-doped GaAs transistors
摘要：
本文报道了一种基于二维电子气晶体管的光子数分辨探测器。当光子脉冲撞击在吸收区域上时，所产生的声子在2DEG中朝向表面附近的沟槽隔离纳米线晶体管弹道地消散。声子-电子相互作用在晶体管中诱导正电导，导致电流增加。利用这一原理，我们获得了高达85%的这种类型的探测器的内部量子效率。
英文摘要：
We report a photon number resolving detector using two-dimensional electron gas (2DEG) based transistors. When the photon pulses impinge on the absorption region, the generated phonons dissipate ballistically in the 2DEG toward the trench isolated nanowire transistors near the surface. The phonon-electron interaction induces a positive conductance in the transistors, resulting in a current increase. With this principle, we obtain an internal quantum efficiency for this type of detector of up to 85%.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
