Using direct variational method with 2-parametric trial function and Landau-Ginzburg-Devonshire thermodynamical approach, we derived analytical expressions for polarization spatial redistribution in the ferroelectrics caused by the biased Scanning Probe Microscope probe. We demonstrate that the shape of nanodomain induced by the probe electric field can be either oblate or prolate depending on the ferroelectric nonlinearity strength. For typical ferroelectric material parameters and probe apex geometry the domain nucleus aspect ratio is close to dielectric anisotropy factor. Corresponding coercive biases of a stable domain formation are in reasonable agreement with available experimental results. Spike-like domains typical for Landauer-Molotskii rigid approach appear in the considered case only when depolarization field energy contribution strongly dominates over the nonlinear correlation and field effects and domain wall energy.
The screening efficiency of a metal-ferroelectric interface plays a critical role in determining the polarization stability and hence the functional properties of ferroelectric thin films. Imperfect screening leads to strong depolarization fields that reduce the spontaneous polarization or drive the formation of ferroelectric domains. We demonstrate that by modifying the screening at the metal-ferroelectric interface through insertion of ultrathin dielectric spacers, the strength of the depolarization field can be tuned and thus used to control the formation of nanoscale domains. Using piezore…
Using a combination of computational simulations, atomic-scale resolution imaging and phenomenological modelling, we examine the underlying mechanism for nanodomain restructuring in lead zirconate titanate (PZT) nanodisks driven by electron beams. The observed subhertz nanodomain dynamics are identified with relaxation oscillations where the charging/discharging cycle time is determined by saturation of charge traps and nanodomain wall creep. These results are unusual in that they indicate very slow athermal dynamics in nanoscale systems.
Weakly coupled ferroelectric/dielectric superlattice thin film heterostructures exhibit complex nanoscale polarization configurations that arise from a balance of competing electrostatic, elastic, and domain-wall contributions to the free energy. A key feature of these configurations is that the polarization can locally have a significant component that is not along the thin-film surface normal direction, while maintaining zero net in-plane polarization. PbTiO3/SrTiO3 thin-film superlattice heterostructures on a conducting SrRuO3 bottom electrode on SrTiO3 have a room-temperature stripe nanodo…
There is growing evidence that domain walls in ferroics can possess emergent properties that are absent in bulk materials. For example, 180 domain walls in the ferroelectric-antiferromagnetic BiFeO3 are particularly interesting because they have been predicted to possess a range of intriguing behaviors; including electronic conduction and enhanced magnetization. To date, however, ordered arrays of such domain structures have not been reported. Here, we report the observation of 180 stripe nanodomains in (110)-oriented BiFeO3 thin films grown on orthorhombic GdScO3 (010)O substrates, and their …
We report the synthesis and structural characterisation of three mixed-metal formate perovskite families [C(NH$_2$)$_3$]M$_{1-x}$Cu$_x$(HCOO)$_3$ (M = Mn, Zn, Mg). Using a combination of infrared spectroscopy, non-negative matrix factorization, and reverse Monte Carlo refinement, we show that the Mn- and Zn-containing compounds support compositional nanodomains resembling the polar nanoregions of conventional relaxor ferroelectrics. The M = Mg family exhibits a miscibility gap that we suggest reflects the limiting behaviour of nanodomain formation.
We propose a self-consistent theoretical approach capable to describe the peculiarities of the anisotropic nanodomain formation induced by a charged AFM probe on non-polar cuts of ferroelectrics. The proposed semi-phenomenological approach accounts for the difference of the threshold fields required for the domain wall motion along non-polar X- and Y - cuts, and polar Z - cut of LiNbO3. The effect steams from the fact, that the minimal distance between the equilibrium atomic positions of domain wall and the profile of lattice pinning barrier appeared different for different directions due to t…
Ferroelectric materials, upon electric field biasing, display polarization discontinuities known as Barkhausen jumps, a subclass of a more general phenomenon known as crackling noise. Herein, we follow at the nanoscale the motion of 90 degree needle domains induced by an electric field applied in the polarization direction of the prototypical ferroelectric BaTiO3, inside a transmission electron microscope. The nature of motion and periodicity of Barkhausen pulses leads to real-time visualization of distinctive interaction mechanisms of the domains with each other but without coming into contac…
The nanodomain pattern in ferroelectric/dielectric superlattices transforms to a uniform polarization state under above-bandgap optical excitation. X-ray scattering reveals a disappearance of domain diffuse scattering and an expansion of the lattice. The reappearance of the domain pattern occurs over a period of seconds at room temperature, suggesting a transformation mechanism in which charge carriers in long-lived trap states screen the depolarization field. A Landau-Ginzburg-Devonshire model predicts changes in lattice parameter and a critical carrier concentration for the transformation.
Robust Electrocaloric Performance Enabled by Highly-Polar Frustrated Nanodomains in NaNbO3-Based Ferrodistortive Relaxor
Institutes of Physical Science and Information Technology, Leibniz International Joint Research Center of Materials Sciences of Anhui Province, Anhui University（安徽大学物理科学与信息技术学院，安徽省材料科学莱布尼茨国际联合研究中心）；School of Materials Science and Engineering, Hainan University（海南大学材料科学与工程学院）；Department of Physics, University of Science and Technology Beijing（北京科技大学物理系）；Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Materials Science and Engineering, Xiangtan University（湘潭大学材料科学与工程学院薄膜材料与器件湖南省重点实验室）；Laboratory of Dielectric Functional Materials, School of Materials Science and Engineering, Anhui University（安徽大学材料科学与工程学院介电功能材料实验室）；Institute for Superconducting and Electronic Materials, Australian Institute for Innovative Materials, University of Wollongong（伍伦贡大学澳大利亚创新材料研究所超导与电子材料研究院）
Relaxor ferroelectrics are applied in electronic devices such as actuators and sonars. Morphotrophic phase boundaries (MPBs) with monoclinic structures are known for their high piezoelectricity and electromechanical coupling factors in solid solutions of PbTiO$_{3}$ and relaxor ferroelectrics (Pb(Mg$_{1/3}$, Nb$_{2/3}$)O$_{3}$ or Pb(Zn$_{1/3}$, Nb$_{1/3}$)O$_{3}$). However, the monoclinic structures related to polar nanosize domains (polar nanoregions) exhibiting the relaxor properties of dielectric dispersion have not been reported. Using transmission electron microscopy and synchrotron x-ray…
In the framework of the Landau-Ginzburg-Devonshire approach coupled with electrostatic equations, we performed finite element modeling of the polarization behavior in a ferroelectric barium titanate core covered with a tunable paraelectric strontium titanate shell placed in a polymer or liquid medium. A stable two-dimensional vortex is formed in the core after a zero-field relaxation of an initial random or poly-domain distribution of the polarization, where the vortex axis is directed along one of the core crystallographic axes. Subsequently, sinusoidal pulses of a homogeneous electric field …
Unusual vortex structure in ultrathin Pb(Zr$_{0.5}$Ti$_{0.5}$)O$_3$ films
利用第一性原理方法，我们确定了PbZr $_{0.5}$ Ti $_{0.5}$ O $_3$薄膜的铁电图形.结果表明，在系统中形成了涡旋条纹，它们是观测到的180个$^\circ$畴的原因。当外加一个局部外场时，涡旋条纹转变为涡旋环结构，导致在场区中心形成一个极化方向与外场反平行的小畴。这可以提供一种方便的方式来操纵薄膜中的纳米畴。
Dielectric nonlinearity of relaxor ferroelectric ceramics at low ac drives
研究了（PbMg $_{1/3}$ Nb $_{2/3}$ O $_3$）$_{0.9}$（PbTiO $_3$）$_{0.1}$（0.9PMN-0.1PT）弛豫陶瓷在不同交流驱动电压下的介电非线性响应。据指出：（i）在高温下，介电常数与AC场幅度无关;（ii）随着AC驱动的增加，介电常数最大值增加，并且最大值的温度向较低温度偏移;（iii）当测量频率增加时，非线性效应减弱。增加交流驱动的影响被发现是类似的，降低频率。我们认为，弛豫体在低驱动下的介电非线性可以用遍历空间连续收缩的相变理论来解释。为了验证理论，对低交流驱动下的微极化翻转进行了蒙特卡罗模拟。
We report first-principle atomistic simulations on the effect of local strain gradients on the nanoscale domain morphology of free-standing PbTiO$_3$ ultrathin films. First, the ferroelectric properties of free films at the atomic level are reviewed. For the explored thicknesses (10 to 23 unit cells), we find flux-closure domain structures whose morphology is thickness dependent. A critical value of 20 unit cells is observed: thinner films show structures with 90$^\circ$ domain loops, whereas thicker ones develop, in addition, 180$^\circ$ domain walls, giving rise to structures of the Landau-L…
Large Enhancements in Optical and Piezoelectric Properties in Ferroelectric Zn1-xMgxO Thin Films through Engineering Electronic and Ionic Anharmonicities
Embedded Ferroelectric Nanoclusters can drive Polarization Reversal in a Non-Ferroelectric Polar Film via the Proximity Effect
Institute of Physics of the National Academy of Sciences of Ukraine（乌克兰国家科学院物理研究所）；Frantsevich Institute for Problems in Materials Science, National Academy of Sciences of Ukraine（乌克兰国家科学院弗伦采维奇材料科学问题研究所）；Department of Materials Science and Engineering, University of Tennessee, Knoxville（田纳西大学诺克斯维尔分校材料科学与工程系）；Department of Materials Science and Engineering, Pennsylvania State University（宾夕法尼亚州立大学材料科学与工程系）；Zone 5 Technologies（Zone 5 科技公司）
Tip-Based Proximity Ferroelectric Switching and Piezoelectric Response in Wurtzite Multilayers
Frantsevich Institute for Problems in Materials Science, National Academy of Sciences of Ukraine（乌克兰国家科学院弗拉特谢维奇材料科学问题研究所）；Institute of Physics, National Academy of Sciences of Ukraine（乌克兰国家科学院物理研究所）；Department of Materials Science and Engineering, University of Tennessee（田纳西大学材料科学与工程系）；Department of Materials Science and Engineering, Pennsylvania State University（宾夕法尼亚州立大学材料科学与工程系）
We report on the electric field response of 180 degree nanodomain walls in BaTiO$_3$ using in situ electrical biasing in transmission electron microscopy (TEM). The sample is biased on a micro-device designed for reliable testing whose key attributes are confirmed by finite element calculations. The presence of weakly charged zig-zag domain walls at room temperature is attributed to the geometric confinement of the device. The motion of the domain walls under the applied electric field allows to extract local P-E loops where distinct domain wall pinning in deep and random energy potential prof…
In the framework of the Landau-Ginzburg-Devonshire (LGD) approach, we studied the possibility of controlling the polarity and chirality of equilibrium domain structures by a homogeneous external electric field in a nanosized ferroelectric core covered with an ultra-thin shell of screening charge. Under certain screening lengths and core sizes, the minimum of the LGD energy, which consists of Landau-Devonshire energy, Ginzburg polarization gradient energy, and electrostatic terms, leads to the spontaneous appearance of stable labyrinth domain structures in the core. The labyrinths evolve from a…
Defect engineering has been a powerful tool to enable the creation of exotic phases and the discovery of intriguing phenomena in ferroelectric oxides. However, accurate control the concentration of defects remains a big challenge. In this work, ion implantation, that can provide controllable point defects, allows us the ability to produce a controlled defect-driven true super-tetragonal (T) phase with enhanced tetragonality in ferroelectric BiFeO3 thin films. This point defect engineering is found to drive the phase transition from the as-grown mixed rhombohedral-like (R) and tetragonal-like (…
The polarization and strain response of ferroelectric materials at fields below the macroscopic coercive field is of a paramount importance for the operation of many electronic devices. The response of real ferroelectric and related materials is in general complex and difficult to interpret. The reason for this is that many processes in a ferroelectric material contribute to its properties, often concurrently. Examples include motion of ferroelectric and ferroelastic domains, presence of domains within domains, dynamics of different types of polar nano-entities, interaction of polar nano-entit…
Proximity Ferroelectricity in Compositionally Graded Structures
Frantsevich Institute for Problems in Materials Science, National Academy of Sciences of Ukraine（乌克兰国家科学院弗拉采维奇材料科学问题研究所）；Institute of Physics, National Academy of Sciences of Ukraine（乌克兰国家科学院物理研究所）；University of Tennessee（田纳西大学）；Pennsylvania State University（宾夕法尼亚州立大学）
We introduce an equivalent-circuit element based on the theory of interface pinning in random systems, to analyze the contribution of domain wall motion below the coercive field to the impedance of a ferroelectric, as a function of amplitude $E_0$ and frequency $f$ of an applied ac electric field. We investigate capacitor stacks, containing ferroelectric 0.5(Ba$_{0.7}$Ca$_{0.3}$)TiO$_{3}$--0.5Ba(Zr$_{0.2}$Ti$_{0.8}$)O$_{3}$ (BCZT) thin films, epitaxially grown by pulsed laser deposition on Nb-doped SrTiO$_3$ single crystal substrates and covered with Au electrodes. Impedance spectra from $f=10…
Online training of deep neural networks (DNN) can be significantly accelerated by performing in-situ vector matrix multiplication in a crossbar array of analog memories. However, training accuracies often suffer due to device non-idealities such as nonlinearity, asymmetry, limited bit precision and dynamic weight update range within constrained power budget. Here, we report a three-terminal Ferroelectric-Field-Effect-Transistor based on low thermal budget processes that can work efficiently as an analog synaptic transistor. Ferroelectric polymer P(VDF-TrFE) as the gate insulator and 2D semicon…
Following how the electrical transistor revolutionized the field of electronics,the realization of an optical transistor in which the flow of light is controlled optically should open the long-sought era of optical computing and new data processing possibilities. However, such function requires photons to influence each other, an effect which is unnatural in free space. Here it is shown that a ferroelectric and photovoltaic crystal gated optically at the onset of its bandgap energy can act as a photonic transistor. The light-induced charge generation and distribution processes alter the intern…
This work explores a nontrivial temperature behavior of the carriers concentration, which governs graphene channel conductance in the nano-structure "graphene channel on ferroelectric substrate" that is a basic element for FETs in non-volatile memory units of new generation. We revealed the transition from a single to double antiferroelectric-like hysteresis loop of the concentration voltage dependence that happens with the temperature increase and then exist in a wide temperature range (from 350 to 500 K). Unexpectedly we revealed the double loops of polarization and concentration can have ir…
The structure of 180-degree uncharged rotational domain wall in a multiaxial ferroelectric film is studied within the framework of analytical Landau-Ginzburg-Devonshire (LGD) approach. The Finite Element Modelling (FEM) is used to solve numerically the system of the coupled nonlinear Euler-Lagrange (EL) differential equations of the second order for two components of polarization. We show that the structure of the domain wall and corresponding (meta)stable phase of the film are controlled by a single master parameter, dimensionless ferroelectric anisotropy μ. We fitted the static profile of a …
Flexoelectric effect impact on the generalized susceptibility and soft phonons dispersion was not studied in the long-range ordered phases of ferroics. The gap in the knowledge motivated us to establish the impact of the flexocoupling on the correlation function of the long-range order parameter fluctuations in ferroelectric phase of ferroics with local disordering sources. Within Landau-Ginzburg-Devonshire approach we obtained analytical expressions for the generalized susceptibility and phonon dispersion relations in the ferroelectric phase. Unexpectedly, the joint action of static and dynam…
Antiferromagnets (AFMs) are presently considered as promising materials for applications in spintronics and random access memories due to the robustness of information stored in AFM state against perturbing magnetic fields (P. Wadley et al., Science 351, 587 (2016)). In this respect, AFM multiferroics maybe attractive alternatives for conventional AFMs as the coupling of magnetism with ferroelectricity (magnetoelectric effect) offers an elegant possibility of electric field control and switching of AFM domains. Here we report the results of comprehensive experimental and theoretical investigat…
