arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1004.0042cond-mat.str-el
收藏

CrN中相关绝缘体到反铁磁金属转变的证据

Evidence for a correlated insulator to antiferromagnetic metal transition in CrN

P. A. Bhobe, A. Chainani, M. Taguchi, T. Takeuchi, R. Eguchi, M. Matsunami, K. Ishizaka, Y. Takata, M. Oura, Y. Senba, H. Ohashi, Y. Nishino, M. Yabashi, K. Tam… 展开作者

P. A. Bhobe, A. Chainani, M. Taguchi, T. Takeuchi, R. Eguchi, M. Matsunami, K. Ishizaka, Y. Takata, M. Oura, Y. Senba, H. Ohashi, Y. Nishino, M. Yabashi, K. Tamasaku, T. Ishikawa, K. Takenaka, H. Takagi, S. Shin

摘要:

研究了氮化铬(CrN)在T_N ~ 286 K一级磁结构转变过程中的电子结构。共振光电子能谱显示在费米能级处的3d偏态密度中存在一个能隙,原位库仑能U约为4.5 eV,表明电子-电子之间存在很强的关联。体敏高分辨(6 meV)激光光电子能谱显示,在T_N以下存在明显的费米边,表明存在反铁磁金属。硬X射线Cr 2 p芯能级谱显示出T_N随时间的变化,这是由于相干态的屏蔽作用引起的。电阻率证实了在T_N以上(E_g ~ 70 meV)为绝缘体,T_N以下为无序金属。结果表明,CrN从相关绝缘体转变为反铁磁金属,耦合到磁结构转变。

英文摘要:

We investigate the electronic structure of Chromium Nitride (CrN) across the first-order magneto-structural transition at T_N ~ 286 K. Resonant photoemission spectroscopy shows a gap in the 3d partial density of states at the Fermi level and an On-site Coulomb energy U ~ 4.5 eV, indicating strong electron-electron correlations. Bulk-sensitive high resolution (6 meV) laser photoemission reveals a clear Fermi edge indicating an antiferromagnetic metal below T_N. Hard x-ray Cr 2p core-level spectra show T-dependent changes across T_N which originate from screening due to coherent states as substantiated by cluster model calculations using the experimentally observed U. The electrical resistivity confirms an insulator above T_N (E_g ~ 70 meV) which becomes a disordered metal below T_N. The results indicate CrN transforms from a correlated insulator to an antiferromagnetic metal, coupled to the magneto-structural transition.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑