与GaN近晶格匹配的a面（11-20）AlInN的各向异性结构和光学性质
Anisotropic structural and optical properties of a-plane (11-20) AlInN nearly-lattice-matched to GaN
摘要：
我们报道了与GAN晶格匹配的a面（11-20）AlInN层的外延生长。与c面取向的外延层不同，a面Al_{1-x} In_{x} N不能同时在两个面内方向上与GAN晶格匹配。我们研究了温度对铟掺入的影响，并在760^{o}C的生长温度下获得了近晶格匹配的Al_{0.81} In_{0.19} N。我们概述了一个程序来检查面内晶格失配使用高分辨率X射线衍射，并评估应变和临界厚度。偏振分辨的光学透射率测量的Al_{0.81} In_{0.19} N外延层揭示了一个带隙的差异约140毫电子伏之间（电场）E_parallel_c [0001]轴和E_vertical_c的条件与室温光致发光峰值为3.38 eV强极化与E_parallel_c，在很好的协议与应变相关的能带结构计算。
英文摘要：
We report epitaxial growth of a-plane (11-20) AlInN layers nearly-lattice-matched to GaN. Unlike for c-plane oriented epilayers, a-plane Al_{1-x}In_{x}N cannot be simultaneously lattice-matched to GaN in both in-plane directions. We study the influence of temperature on indium incorporation and obtain nearly-lattice-matched Al_{0.81}In_{0.19}N at a growth temperature of 760^{o}C. We outline a procedure to check in-plane lattice mismatch using high resolution x-ray diffraction, and evaluate the strain and critical thickness. Polarization-resolved optical transmission measurements of the Al_{0.81}In_{0.19}N epilayer reveal a difference in bandgap of ~140 meV between (electric field) E_parallel_c [0001]-axis and E_perpendicular_c conditions with room-temperature photoluminescence peaked at 3.38 eV strongly polarized with E_parallel_c, in good agreement with strain-dependent band-structure calculations.
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