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arXiv 1003.1323cond-mat.mes-hall
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纳米结构中的磁电阻:非均匀电流的作用

Magnetoresistance in nanostructures: the role of nonuniform current

Tiago S. Machado, M. Argollo de Menezes, Tatiana G. Rappoport, Luiz C. Sampaio

摘要:

我们发展了一种计算磁性纳米结构磁电阻的方法。我们离散的磁盘在小细胞和数值求解的Landau-Lifshitz-Gilbert(LLG)方程,以获得其磁化剖面。我们认为,各向异性磁电阻(AMR)的主要来源依赖于当地的磁化。然后,我们将其作为输入,使用松弛方法数值计算电阻和电流分布。我们展示了如何磁电阻测量可以是有用的,以获得有关磁结构的信息。此外,我们得到了不同的磁配置在静态和动态制度的非均匀电流分布。

英文摘要:

We developed a method to calculate the magnetoresistance of magnetic nanostructures. We discretize a magnetic disk in small cells and numerically solve the Landau-Lifshitz-Gilbert (LLG) equation in order to obtain its magnetization profile. We consider a anisotropic magnetoresistance (AMR) that depends on the local magnetization as the main source of the magnetoresistance. We then use it as an input to calculate the resistance and current distribution numerically, using a relaxation method. We show how magnetoresistance measurements can be useful to obtain information on the magnetic structure. Additionally, we obtain non-homogeneous current distributions for different magnetic configurations in static and dynamical regimes.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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