非互易磁电阻、方向不均匀性和混合对称霍尔器件
Non-reciprocal magnetoresistance, directional inhomogeneity and mixed symmetry Hall devices
摘要：
现象类似的非互易电荷输运违反Onsagers互易关系，可以开发在方向不均匀的导电膜沿电流轨迹与非均匀的霍尔系数。证明在铁磁CoPd膜的效果和分析比较与单向磁阻现象。我们建议使用一个工程的不均匀性自旋电子学应用，并提出了混合对称霍尔器件的概念，其中横向电流霍尔信号测量在纵向接触安排。磁化反转和记忆检测在三端和分区正常金属铁磁体（NM - FM）器件设计中得到了验证。采用分区FM-NM-FM结构实现多位存储。工程铁磁器件中反对称信号的相对幅度为百分之几，比其单向磁阻类似物高10至1000倍。
英文摘要：
Phenomenology similar to the nonreciprocal charge transport violating Onsagers reciprocity relations can develop in directionally inhomogeneous conducting films with nonuniform Hall coefficient along the current trajectory. The effect is demonstrated in ferromagnetic CoPd films and analyzed in comparison with the unidirectional magnetoresistance phenomena. We suggest to use an engineered inhomogeneity for spintronics applications and present the concept of mixed symmetry Hall devices in which transverse to current Hall signal is measured in a longitudinal contacts arrangement. Magnetization reversal and memory detection is demonstrated in the three terminal and the partitioned normal metal-ferromagnet (NM - FM) device designs. Multi-bit memory is realized in the partitioned FM-NM-FM structure. The relative amplitude of the antisymmetric signal in the engineered ferromagnetic devices is few percent which is 10 to 1000 times higher than in their unidirectional magnetoresistance analogues.
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