拓扑绝缘体表面的面内磁电阻
In-Plane Magnetoresistance on the Surface of Topological Insulator
摘要：
研究了拓扑绝缘体表面铁磁绝缘体-正常绝缘体-铁磁绝缘体（F $\mid$ N $\mid$ F）和铁磁绝缘体-势垒绝缘体-铁磁绝缘体（F $\mid$ B $\mid$ F）结的隧穿磁输运性质，其中铁磁两侧的面内磁化方向可以是平行和反平行的.我们推导出了两个平行和反平行磁化方向的结的电子电导的解析表达式，并利用它们计算了两个结的磁阻。我们用薄势垒近似研究了F $\mid$ B $\mid$ F结。我们发现，虽然F $\mid$ N $\mid$ F和F $\mid$ B $\mid$ F结的磁电阻可以通过改变磁化织构的强度来调节，但它们随着磁化强度的变化表现出不同的行为。与F $\mid$ N $\mid$ F结的磁电阻相比，F $\mid$ B $\mid$ F结的磁电阻随着磁化强度的增加而表现出非常平稳的增强。我们建议一个实验设置来检测我们预测的效果。
英文摘要：
We study the tunneling magneto-transport properties of the Ferromagnetic Insulator-Normal Insulator-Ferromagnetic Insulator(F$\mid$N$\mid$F) and Ferromagnetic Insulator-Barrier Insulator-Ferromagnetic Insulator (F$\mid$B$\mid$F) junctions on the surface of topological insulator in which in-plane magnetization directions of both ferromagnetic sides can be parallel and antiparallel. We derive analytical expressions for electronic conductances of the two mentioned junctions with both parallel and antiparallel directions of magnetization and using them calculate magnetoresistance of the two junctions. We use thin barrier approximation for investigating the F$\mid$B$\mid$F junction. We find that although magnetoresistance of the F$\mid$N$\mid$F and F$\mid$B$\mid$F junctions are tunable by changing the strength of magnetization texture, they show different behaviors with variation of magnetization. In contrast to the magnetoresistance of F$\mid$N$\mid$F, magnetoresistance of F$\mid$B$\mid$F junctions shows very smooth enhance by increasing the strength of magnetization. We suggest an experimental set up to detect our predicted effects.
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