薄TiN-films磁电阻的量子临界性和多交叉点
Quantum criticality and multiple crossing points in the magnetoresistance of thin TiN-films
摘要：
我们测量了TiN薄膜的$R(T,B)$，它非常接近于无序驱动的超导体-绝缘体转变，但在零场和低温下仍然是超导的。在磁场中，我们发现在三个不同的温度区域中，在磁场$B_{cX}$处出现三个明显的磁阻等温线交叉点。$R(T,B)$中的每个交叉点对应于$R(T,B_{cX})$中的平台。我们系统地研究了这些交叉点附近的无序诱导的超导体/绝缘体转变的演变，确定最有希望的候选人的量子相变，并提供估计的两个临界指数$z$和$ν$。
英文摘要：
We have measured $R(T,B)$ of a TiN thin-film very close to the disorder-driven superconductor-insulator transition but still superconducting at zero field and low temperatures. In a magnetic field we find three distinct crossing point of the magnetoresistance isotherms occur at magnetic fields $B_{cX}$ in three different temperature regions. Each crossing point in $R(T,B)$ corresponds to a plateau in $R(T,B_{cX})$. We systematically study the evolution of these crossing point near the disorder-induced superconductor/insulator transition, identify the most promising candidate for a quantum phase transition, and provide estimates for the two critical exponents $z$ and $ν$.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
