Si-SiO2界面附近离子注入磷施主的ESR研究
ESR studies of ion implanted phosphorus donors near the Si-SiO2 interface
摘要：
本工作报告的ESR研究的低能量，低通量的磷离子注入到硅中，以观察放置在靠近Si-SiO2界面的磷供体的激活。电测量，这是用来估计施主激活水平，报告高注入回收率时，使用14千电子伏的磷离子，然而，它是不可能的相关的超精细共振信号的强度与电测量的SiO2界面的存在下，由于施主状态电离（即补偿效应）。在具有H-钝化表面的硅上进行的比较测量报告了与界面处的较低表面缺陷密度一致的较高供体超精细信号水平。
英文摘要：
This work reports an ESR study of low energy, low fluence phosphorus ion implantation into silicon in order to observe the activation of phosphorus donors placed in close proximity to the Si-SiO2 interface. Electrical measurements, which were used to estimate donor activation levels, reported high implant recoveries when using 14 keV phosphorus ions however, it was not possible to correlate the intensity of the hyperfine resonance signal with the electrical measurements in the presence of an SiO2 interface due to donor state ionisation (i.e. compensation effects). Comparative measurements made on silicon with an H-passivated surface reported higher donor hyperfine signal levels consistent with lower surface defect densities at the interface.
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