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arXiv 1001.4403cond-mat.supr-concond-mat.str-el
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Ce-Pd-In单晶的溶液生长:重费米子超导体Ce2PdIn8的表征

Solution growth of Ce-Pd-In single crystals: characterization of the heavy-fermion superconductor Ce2PdIn8

Klara Uhlirova, Jan Prokleska, Vladimir Sechovsky, Stanislav Danis

摘要:

研究了最近报道的新化合物Ce_2 PdIn_8单晶的溶液生长。当从2:1:20 - 2:1:35范围内的化学计量比生长时,大多数获得由Ce 2 PdIn 8的薄(~50 μ m)单晶层覆盖的CeIn 3的单晶。使用钯更丰富的组合物的Ce 2 PdIn 8层的厚度增加,这允许机械提取所需的化合物的单相板适合于磁性和超导性的彻底研究。在一些溶液生长产物中,还鉴定出CePd 3 In 6(LaNi 3 In 6型结构)和具有化学计量CePd 2 In 7、Ce1.5Pd1.5In7(仅通过EDX测定)的痕量相。Ce 2 PdIn 8单晶的磁性测量揭示了具有显著磁晶各向异性的Ce 3+离子的顺磁行为。在70 K以上,磁化率遵循Curie-Weiss定律,对于沿a-(-90 K)和c-(-50 K)轴施加的磁场,顺磁居里温度的值相当不同。低于所报道的超导性的临界温度Tc(0.69 K),电阻率下降到零。几种晶体的电阻率,热容和交流磁化率的比较测量表明,超导转变是强烈的样品依赖性。

英文摘要:

Solution growth of single crystals of the recently reported new compound Ce2PdIn8 was investigated. When growing from a stoichiometry in a range 2:1:20 - 2:1:35, single crystals of CeIn3 covered by a thin (~50 um) single-crystalline layer of Ce2PdIn8 were mostly obtained. Using palladium richer compositions the thickness of the Ce2PdIn8 layers were increased, which allowed mechanical extraction of single-phase slabs of the desired compound suitable for a thorough study of magnetism and superconductivity. In some solution growth products also CePd3In6 (LaNi3In6 - type of structure) and traces of phases with the stoichiometry CePd2In7, Ce1.5Pd1.5In7 (determined only by EDX) have been identified. Magnetic measurements of the Ce2PdIn8 single crystals reveal paramagnetic behaviour of the Ce3+ ions with significant magnetocrystalline anisotropy. Above 70 K the magnetic susceptibility follows the Curie-Weiss law with considerably different values of the paramagnetic Curie temperature, for the magnetic field applied along the a- (-90 K) and c-(-50 K) axis. Below the reported critical temperature for superconductivity Tc (0.69 K) the electrical resistivity drops to zero. Comparative measurements of the electrical resistivity, heat capacity and AC susceptibility of several crystals reveal that the superconducting transition is strongly sample-dependent.

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