边缘匹配石墨烯纳米间隙的制备及其电子发射性能
Fabrication of graphene nanogap with crystallographically matching edges and its electron emission properties
摘要：
我们展示了石墨烯纳米间隙的制造与晶体学匹配的边缘SiO2Si衬底上的泄漏。然后在高真空室中对具有几百纳米间隔的石墨烯纳米间隙进行电流-电压测量。平行的边缘有助于建立均匀的电场，并允许我们对单个石墨烯进行电子发射研究。结果表明，在低偏压下，I-V特性受空间电荷限制，而在高电压下，I-V曲线符合FN模型。我们还研究了真空电子器件的静电门效应。具有原子平行边缘的石墨烯纳米间隙可能为真空纳米电子学的基础和应用研究开辟机会。
英文摘要：
We demonstrate the fabrication of graphene nanogap with crystallographically matching edges on SiO2Si substrates by divulsion. The current-voltage measurement is then performed in a high-vacuum chamber for a graphene nanogap with few hundred nanometers separation. The parallel edges help to build uniform electrical field and allow us to perform electron emission study on individual graphene. It was found that current-voltage characteristics are governed by the space-charge-limited flow of current at low biases while the FN model fits the I-V curves in high voltage regime. We also examined electrostatic gating effect of the vacuum electronic device. Graphene nanogap with atomically parallel edges may open up opportunities for both fundamental and applied research of vacuum nanoelectronics.
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