arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 0912.0974cond-mat.mes-hall
收藏

Orbital photogalvanic effects in quantum-confined structures

J. Karch, S. A. Tarasenko, P. Olbrich, T. Schönberger, C. Reitmaier, D. Plohmann, Z. D. Kvon, S. D. Ganichev

英文摘要:

We report on the circular and linear photogalvanic effects caused by free-carrier absorption of terahertz radiation in electron channels on (001)-oriented and miscut silicon surfaces. The photocurrent behavior upon variation of the radiation polarization state, wavelength, gate voltage and temperature is studied. We present the microscopical and phenomenological theory of the photogalvanic effects, which describes well the experimental results. In particular, it is demonstrated that the circular (photon-helicity sensitive) photocurrent in silicon-based structures is of pure orbital nature originating from the quantum interference of different pathways contributing to the absorption of monochromatic radiation.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑