使用盖革模式探测器的单施主器件的单离子注入
Single ion implantation for single donor devices using Geiger mode detectors
摘要：
被设计成利用单原子（例如供体或缺陷）的性质的电子器件已经成为现实，最近展示了供体光谱、单光子发射源和利用金刚石中的缺陷中心的磁成像。改善单离子检测器灵敏度与改善对离子离散的控制以及通过允许在潜在更大距离处进行离子感测而在与单施主装置构造区的有源区的布局集成中提供更大灵活性有关。使用远程定位的被动门控单离子盖革模式雪崩二极管（SIGMA）检测器，我们已经证明了100%的检测效率在距离> 75 μ m的收集结的中心。这种检测效率是通过对注入离子产生的约600个或更少的电子-空穴对的灵敏度来实现的。具有这种灵敏度并与薄电介质（例如5nm栅极氧化物）集成的使用低能量Sb注入的离子检测器将具有<2.5nm的范围末端离散。通过修改离子束设置以允许SIGMA探测器的低温操作来实现错误计数概率的显著降低。在1 Hz下使用230 ns的检测窗口，对于300 K和77 K的操作温度，假计数的概率分别测量为1E-1和1E-4。低温操作和减少的假暗计数对于实现单离子到达的高置信度至关重要。对于本工作中的器械性能，置信度计算为在每个门控窗口的平均离子数为0.015时，对于1E-4的错误计数概率，计数一个且仅一个离子的概率> 98%。
英文摘要：
Electronic devices that are designed to use the properties of single atoms such as donors or defects have become a reality with recent demonstrations of donor spectroscopy, single photon emission sources, and magnetic imaging using defect centers in diamond. Improving single ion detector sensitivity is linked to improving control over the straggle of the ion as well as providing more flexibility in lay-out integration with the active region of the single donor device construction zone by allowing ion sensing at potentially greater distances. Using a remotely located passively gated single ion Geiger mode avalanche diode (SIGMA) detector we have demonstrated 100% detection efficiency at a distance of >75 um from the center of the collecting junction. This detection efficiency is achieved with sensitivity to ~600 or fewer electron-hole pairs produced by the implanted ion. Ion detectors with this sensitivity and integrated with a thin dielectric, for example 5 nm gate oxide, using low energy Sb implantation would have an end of range straggle of <2.5 nm. Significant reduction in false count probability is achieved by modifying the ion beam set-up to allow for cryogenic operation of the SIGMA detector. Using a detection window of 230 ns at 1 Hz, the probability of a false count was measured as 1E-1 and 1E-4 for operation temperatures of 300K and 77K, respectively. Low temperature operation and reduced false, dark, counts are critical to achieving high confidence in single ion arrival. For the device performance in this work, the confidence is calculated as a probability of >98% for counting one and only one ion for a false count probability of 1E-4 at an average ion number per gated window of 0.015.
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