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arXiv 0909.3679cond-mat.mes-hallcond-mat.mtrl-sci
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悬浮生长碳纳米管器件的简易制备

Facile fabrication of suspended as-grown carbon nanotube devices

V. K. Sangwan, V. W. Ballarotto, M. S. Fuhrer, E. D. Williams

摘要:

报道了一种简单的可扩展方案,用于制造悬浮碳纳米管场效应晶体管(CNT-FET),而不暴露原始的生长碳纳米管进行后续的化学处理。通过控制悬浮纳米管的密度和在同一电极组上多次复制器件,证明了该技术的多功能性和易用性。悬浮的碳纳米管的结果在双极传输行为与可忽略的滞后。悬浮的CNT-FET的Hooges常数(2.6 × 10-3)比SiO2上的对照CNT-FET(5.6 × 10-2)低约20倍。

英文摘要:

A simple scalable scheme is reported for fabricating suspended carbon nanotube field effect transistors (CNT-FETs) without exposing pristine as-grown carbon nanotubes to subsequent chemical processing. Versatility and ease of the technique is demonstrated by controlling the density of suspended nanotubes and reproducing devices multiple times on the same electrode set. Suspending the carbon nanotubes results in ambipolar transport behavior with negligible hysteresis. The Hooges constant of the suspended CNT-FETs (2.6 x 10-3) is about 20 times lower than for control CNT-FETs on SiO2 (5.6 x 10-2).

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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