We present a unified view of electric transport in undoped clean graphene for finite electric field. The weak field results agree with the Kubo approach. For strong electric field, the current increases non-linearly with the electric field as E^{3/2}. As the Dirac point is moved around in reciprocal space by the field, excited states are generated, in a way analogous to the generation of defects in a quench through a quantum critical point. These results are also analyzed in terms of Schwinger's pair production and Landau-Zener tunneling. An experiment for cold atoms in optical lattices is proposed to test these ideas.
Quenching of quantum Hall effect and the role of undoped planes in multilayered epitaxial graphene
我们提出了一种机制，淬火的Shubnikov de Haas振荡和量子霍尔效应中观察到的外延石墨烯。实验数据表明，传导电子的散射时间与磁场有关，与回旋轨道周期数量级有关，\textit{i.e.}可以比零场散射时间小得多。我们的方案涉及到不带电层的非凡石墨烯$n=0$朗道能级，它在费米能级产生高密度的态。我们发现，这个$n=0$朗道水平和掺杂平面的导电状态之间的耦合导致具有正确的幅度来解释实验数据的散射机制。
We study the dynamical properties of point-like defects, represented by monoatomic chalcogen vacancies, in WS$_2$-graphene and MoS$_2$-graphene heterobilayers. Employing a multidisciplinary approach based on the combination of ab initio, model Hamiltonian and density matrix techniques, we propose a minimal interacting model that allows for the calculation of electronic transition times associated to population and depopulation of the vacancy by an additional electron. We obtain the "coarse-grained" semiclassical dynamics by means of a master equation approach and discuss the potential role of …
We propose a defect-to-edge topological quantum quench protocol that can efficiently inject electric charge from defect-core states into a chiral edge current of an induced Chern insulator. The initial state of the system is assumed to be a Mott insulator, with electrons bound to topological defects that are pinned by disorder. We show that a "critical quench" to a Chern insulator mass of order the Mott gap shunts charge from defects to the edge, while a second stronger quench can trap it there and boost the edge velocity, creating a controllable current. We apply this idea to a skyrmion charg…
We analyse the electronic and optical properties of graphene quantum dots (GQD) using accurate \textit{ab initio} many-body $GW$ and Bethe-Salpeter calculations. We show that most pristine GQD, including structures with irregular shapes, are characterized by dark low energy singlet excitations that quench fluorescence. We rationalizqe this property by exploiting the chiral symmetry of the low energy electronic states in graphene. Edge \textit{sp}$^3$ functionalization is shown to efficiently brighten these low lying excitations by distorting the \textit{sp}$^2$ backbone planar symmetry. Such f…
The electronic band structure of atomically thin semiconductors can be tuned by the application of a perpendicular electric field. The principle was demonstrated experimentally shortly after the discovery of graphene by opening a finite band gap in graphene bilayers, which naturally are zero-gap semiconductors. So far, however, the same principle could not be employed to control a broader class of materials, because the required electric fields are beyond reach in current devices. To overcome this limitation, we have realized double ionic gated transistors that enable the application of very l…
Following a nonperturbative formulation of strong-field QED developed in our earlier works, and using the Dirac model of the graphene, we construct a reduced QED_{3,2} to describe one species of the Dirac fermions in the graphene interacting with an external electric field and photons. On this base, we consider the photon emission in this model and construct closed formulas for the total probabilities. Using the derived formulas, we study probabilities for the photon emission by an electron and for the photon emission accompanying the vacuum instability in the quasiconstant electric field that…
We study the formation of topological defects (quantum vortices) during the formation of a 2D polariton condensate at the $Γ$ point of a honeycomb lattice via the Kibble-Zurek mechanism. The lattice modifies the single-particle dispersion. The typical interaction energies at the quench time correspond to the linear part of the dispersion. The resulting scaling exponent for the density of topological defects is numerically found as $0.95\pm0.05$. This value differs from the one expected for 2D massive particles (1/2), but is indeed compatible with the one expected for a linear dispersion. We mo…
