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arXiv 0907.5272cond-mat.str-el
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考虑电子相互作用的扩展DFT +U+V方法

Extended DFT+U+V method with on-site and inter-site electronic interactions

Vivaldo Leiria Campo, Matteo Cococcioni

摘要:

在这篇文章中,我们介绍了一个推广的流行的DFT+U方法的基础上扩展的哈伯德模型,包括在网站和网站间的电子相互作用。新的校正哈密顿量的目的是研究系统的电子不完全本地化的原子状态(根据莫特本地化的一般计划)和杂化轨道之间的不同网站起着重要的作用。原型莫特电荷转移(NiO)和共价键合的绝缘体(Si和GaAs)的扩展功能的应用表明其准确性和多功能性和可能性,以获得一个统一的和同样准确的描述范围广泛的非常不同的系统。

英文摘要:

In this article we introduce a generalization of the popular DFT+U method based on the extended Hubbard model that includes on-site and inter-site electronic interactions. The novel corrective Hamiltonian is designed to study systems for which electrons are not completely localized on atomic states (according to the general scheme of Mott localization) and hybridization between orbitals from different sites plays an important role. The application of the extended functional to archetypal Mott - charge-transfer (NiO) and covalently bonded insulators (Si and GaAs) demonstrates its accuracy and versatility and the possibility to obtain a unifying and equally accurate description for a broad range of very diverse systems.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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