准分子laser脉冲沉积原位制备钴掺杂SrFe2As2薄膜
In-situ fabrication of cobalt-doped SrFe2As2 thin films by using pulsed laser deposition with excimer laser
摘要：
铁基层状超导体具有极高的超导转变温度和上临界场，尽管是铁磁材料基础，但它为超导电子学开辟了前景。然而，由于难以制造高质量的薄膜，超导电子学的成功受到限制。报道了用波长为248 nm的KrF准分子激光器和富砷（As）相靶原位脉冲激光沉积技术生长高质量c轴取向的Co掺杂SrFe_2As_2体超导电性薄膜。的温度和磁场的依赖性的磁化强度显示强抗磁性和运输临界电流密度具有优越的Jc-H性能的报告。这些结果为铁基超导体的实际应用提供了必要的信息。
英文摘要：
The remarkably high superconducting transition temperature and upper critical field of iron(Fe)-based layered superconductors, despite ferromagnetic material base, open the prospect for superconducting electronics. However, success in superconducting electronics has been limited because of difficulties in fabricating high-quality thin films. We report the growth of high-quality c-axis-oriented cobalt(Co)-doped SrFe2As2 thin films with bulk superconductivity by using an in-situ pulsed laser deposition technique with a 248-nm-wavelength KrF excimer laser and an arsenic(As)-rich phase target. The temperature and field dependences of the magnetization showing strong diamagnetism and transport critical current density with superior Jc-H performance are reported. These results provide necessary information for practical applications of Fe-based superconductors.
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