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arXiv 0907.3639cond-mat.supr-con
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太赫兹频率下薄膜光学测量V3Si的多带电导率和多带隙超导性

Multi-band conductivity and multi-gap superconductivity in V3Si from optical measurements on films at terahertz frequencies

A. Perucchi, D. Nicoletti, M. Ortolani, C. Marini, R. Sopracase, S. Lupi, U. Schade, M. Putti, I. Pallecchi, C. Tarantini, M. Ferretti, C. Ferdeghini, M. Monni,… 展开作者

A. Perucchi, D. Nicoletti, M. Ortolani, C. Marini, R. Sopracase, S. Lupi, U. Schade, M. Putti, I. Pallecchi, C. Tarantini, M. Ferretti, C. Ferdeghini, M. Monni, F. Bernardini, S. Massidda, P. Dore

摘要:

通过太赫兹波段的反射率和透射率测量,研究了取向V3Si薄膜的多带导电性和多带隙超导性.在正常状态下的透射率光谱的温度依赖性给出了两个频带的证据,有助于膜的导电性。这一结果与密度泛函理论中的电子结构计算是一致的。在此基础上,我们进行了详细的数据分析,发现所有的光学数据可以在一个两带的框架内一致地解释,在超导状态下存在两个光学带隙,对应于2D=kTc值接近1.8和3.8。

英文摘要:

The possibility of multi-band conductivity and multi-gap superconductivity is explored in oriented V3Si thin films by means of reflectance and transmittance measurements at terahertz frequencies. The temperature dependence of the transmittance spectra in the normal state gives evidence of two bands contributing to the film conductivity. This outcome is consistent with electronic structure calculations performed within density functional theory. On this basis, we performed a detailed data analysis and found that all optical data can be consistently accounted for within a two-band framework, with the presence of two optical gaps in the superconducting state corresponding to 2D=kTc values close to 1.8 and 3.8.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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