环形自旋转移存储元件
Annular Spin-Transfer Memory Element
摘要：
提出了一种使用自旋极化电流来切换磁性区域的磁化方向或螺旋度的环形磁存储器。该装置具有环形的磁性材料（厚度为1至5nm，平均半径为20至250nm，宽度为8至100nm），包括具有固定磁螺旋度的参考磁性层和具有可变磁螺旋度的自由磁性层。它们被一层薄的非磁性层隔开。信息是使用垂直于层流动的电流写入的，从而引起改变自由层磁性状态的自旋转移扭矩。电阻取决于设备的磁状态，用于读出存储的信息。与传统的自旋转移磁性随机存取存储器（MRAM）器件相比，该器件提供了几个重要的优点。首先，环的几何形状提供了稳定的磁化状态，尽管如此，很容易改变短电流脉冲。其次，环形几何结构自然解决了自旋转移器件的一个主要挑战：写入需要相对高的电流和低阻抗电路，而读出需要更大的阻抗和磁阻。环形装置通过在放置于环上的不同位置处的单独读取触点和写入触点处执行读取操作和写入操作来适应这些冲突的要求。
英文摘要：
An annular magnetic memory that uses a spin-polarized current to switch the magnetization direction or helicity of a magnetic region is proposed. The device has magnetic materials in the shape of a ring (1 to 5 nm in thickness, 20 to 250 nm in mean radius and 8 to 100 nm in width), comprising a reference magnetic layer with a fixed magnetic helicity and a free magnetic layer with a changeable magnetic helicity. These are separated by a thin non-magnetic layer. Information is written using a current flowing perpendicular to the layers, inducing a spin-transfer torque that alters the magnetic state of the free layer. The resistance, which depends on the magnetic state of the device, is used to read out the stored information. This device offers several important advantages compared to conventional spin-transfer magnetic random access memory (MRAM) devices. First, the ring geometry offers stable magnetization states, which are, nonetheless, easily altered with short current pulses. Second, the ring geometry naturally solves a major challenge of spin-transfer devices: writing requires relatively high currents and a low impedance circuit, whereas readout demands a larger impedance and magnetoresistance. The annular device accommodates these conflicting requirements by performing reading and writing operations at separate read and write contacts placed at different locations on the ring.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
