A scheme of spin diode is proposed that uses a step-like quantum wire with Rashba spin-orbit interaction, connected to two leads with different width. It is shown that a very large vertical spin-polarized current can be generated when electrons transmit from the narrow lead to the wide lead, however, it vanishes or becomes very weak when the transport direction is reversed. This difference is revealed to arise from the different local density of electron states of the quantum wire, which is dependent on the direction of bias. The spin-polarized current in the proposed structure can be generated and manipulated by purely electric means and with strong a robustness against disorder, displaying the feasibility of this structure for a real application.
Magnetic $p$-$n$ junction diodes are fabricated to investigate spin-polarized electron transport. The injection of spin-polarized electrons in a semiconductor is achieved by driving a current from a ferromagnetic injector (Fe), into a bulk semiconductor ($n$-GaAs) via schottky contact. For detection, a diluted magnetic semiconductor ($p$-GaMnAs) layer is used. Clear magnetoresistance was observed only when a high forward bias was applied across the $p$-$n$ junction.
The negative differential resistance (NDR) tunnel diodes are promising alternative devices for beyond-CMOS computing as they offer several potential applications when integrated with transistors. We propose a novel semiconductor-free NDR tunnel diode concept that exhibits an ultra-high peak-to-valley current ratio (PVCR) value. Our proposed NDR diode consists of two cold metal electrodes separated by a thin insulating tunnel barrier. The NDR effect stems from the unique electronic band structure of the cold metal electrodes, i.e., the width of the isolated metallic bands around the Fermi level…
We have studied the current through a carbon nanotube quantum dot with one ferromagnetic and one normal-metal lead. For the values of gate voltage at which the normal lead is resonant with the single available non-degenerate energy level on the dot, we observe a pronounced decrease in the current for one bias direction. We show that this rectification is spin-dependent, and that it stems from the interplay between the spin accumulation and the Coulomb blockade on the quantum dot. Our results imply that the current is spin-polarized for one direction of the bias, and that the degree of spin pol…
In this paper we present a minimalistic model sufficient for current asymmetries in molecules. In particular, we search for an interaction on the molecule which causes current asymmetries independent of additional assumptions or the precise form of its environment. To this end we first discuss earlier proposals and clarify the importance of additional assumptions. We then present a minimal model of a strongly polarizable molecule which shows a strongly asymmetric I/V calculated within time dependent DMRG.
We develop a device model for p-i-n tunneling transit-time diodes based on single- and multiple graphene layer structures operating at the reverse bias voltages. The model of the graphene tunneling transit-time diode (GTUNNETT) accounts for the features of the interband tunneling generation of electrons and holes and their ballistic transport in the device i-section, as well as the effect of the self-consistent electric field associated with the charges of propagating electrons and holes. Using the developed model, we calculate the dc current-voltage characteristics and the small-signal ac fre…
Dynamic properties of NiFe thin films on PMN-PT piezoelectric substrate are investigated using the spin-diode method. Ferromagnetic resonance (FMR) spectra of microstrips with varying width are measured as a function of magnetic field and frequency. The FMR frequency is shown to depend on the electric field applied across the substrate, which induces strain in the NiFe layer. Electric field tunability of up to 100 MHz per 1 kV/cm is achieved. An analytical model based on total energy minimization and the LLG equation, with magnetostriction effect taken into account, is developed to explain the…
We report single-photon emission from electrically driven site-controlled InGaN/GaN quantum dots, fabricated from a planar light-emitting diode structure containing a single InGaN quantum well using a top-down approach. The location, dimension, and height of each single-photon-emitting diode are controlled lithographically, providing great flexibility for chip-scale integration.
Excitons are composite bosons that can feature spin singlet and triplet states. In usual semiconductors, without an additional spin-flip mechanism, triplet excitons are extremely inefficient optical emitters. Transition metal dichalcogenides (TMDs), with their large spin-orbit coupling, have been of special interest for valleytronic applications for their coupling of circularly polarized light to excitons with selective valley and spin$^{1-4}$. In atomically thin MoSe$_2$/WSe$_2$ TMD van der Waals (vdW) heterostructures, the unique atomic registry of vdW layers provides a quasi-angular momentu…
The basic mechanism underlying electric field switching produced by a resonant tunnelling diode (RTD) is analysed and the theory compared with experimental results; agreement to within 12% is achieved. The electro-absorption modulator (EAM) device potential of this effect is explored in an optical waveguide configuration. It is shown that a RTD-EAM can provide significant absorption coefficient change, via the Franz-Keldysh effect, at appropriate optical communication wavelengths around 1550 nm and can achieve up to 28 dB optical modulation in a 200 um active length device. The advantage of th…
We report on measurements of direct spin Hall effect in a lightly n-doped GaAs channel. As spin detecting contacts we employed highly efficient ferromagnetic Fe/(Ga,Mn)As/GaAs Esaki diode structures. We investigate bias and temperature dependence of the measured spin Hall signal and evaluate the value of total spin Hall conductivity and its dependence on channel conductivity and temperature. From the results we determine skew scattering and side jump contribution to the total spin hall conductivity and compare it with the results of experiments on higher conductive n-GaAs channels[Phys. Rev. L…
\ce{MoS_2} is a two dimensional material with a band gap depending on the number of layers and tunable by an external electric field. The experimentally observed intralayer band-to-band tunneling and interlayer band-to-band tunneling in this material present an opportunity for new electronic applications in tunnel field effect transistors. However, such a widely accepted concept has never been supported up by theoretical investigations based on first principles. In this work, using density functional theory, in conjunction with non-equilibrilibrium Green's function techniques and our electric …
We present a quantitative theory of the suppression of the optical linewidth due to charge fluctuation noise in a ${p}$$-$${n}$ diode, recently observed in Anderson et al., Science 366, 1225 (2019). We connect the local electric field with the voltage across the diode, allowing for the identification of the defect depth from the experimental threshold voltage. Furthermore, we show that an accurate description of the decoherence of such spin centers requires a complete spin$-$1 formalism that yields a bi-exponential decoherence process, and predict how reduced charge fluctuation noise suppresse…
We demonstrate control by applied electric field of the charge states in single self-assembled InP quantum dots placed in GaInP Schottky structures grown by metalorganic vapor phase epitaxy. This has been enabled by growth optimization leading to suppression of formation of large dots uncontrollably accumulating charge. Using bias- and polarization-dependent micro-photoluminescence, we identify the exciton multi-particle states and carry out a systematic study of the neutral exciton state dipole moment and polarizability. This analysis allows for the characterization of the exciton wavefunctio…
Compact and electrically controllable on-chip sources of indistinguishable photons are desirable for the development of integrated quantum technologies. We demonstrate that two quantum dot light emitting diodes (LEDs) in close proximity on a single chip can function as a tunable, all-electric quantum light source. Light emitted by an electrically excited driving LED is used to excite quantum dots the neighbouring diode. The wavelength of the quantum dot emission from the neighbouring driven diode is tuned via the quantum confined Stark effect. We also show that we can electrically tune the fin…
Electric transport of double gated bilayer graphene devices is studied as a function of charge density and bandgap. A top gate electrode can be used to control locally the Fermi level to create a pn junction between the double-gated and single-gated region. These bilayer graphene pn diodes are characterized by non-linear currents and directional current rectification, and we show the rectified direction of the source-drain voltage can be controlled by using gate voltages. A systematic study of the pn junction characteristics allows to extract a gate-dependent bandgap value which ranges from 0 …
Operation of semiconductor lasers in the 20--50 $μ$m wavelength range is hindered by strong non-radiative recombination in the interband laser diodes, and strong lattice absorption in GaAs-based quantum cascade structures. Here, we propose an electrically pumped laser diode based on multiple HgTe quantum wells with band structure engineered for Auger recombination suppression. Using a comprehensive model accounting for carrier drift and diffusion, electron and hole capture in quantum wells, Auger recombination, and heating effects, we show the feasibility of lasing at $λ= 26...30$ $μ$m at temp…
We consider theoretically the realization of a tunable terahertz light emitting diode from a quantum well with dressed electrons placed in a highly doped p-n junction. In the considered system the strong resonant dressing field forms dynamic Stark gaps in the valence and conduction bands and the electric field inside the p-n junction makes the QW asymmetric. It is shown that the electrons transiting through the light induced Stark gaps in the conduction band emit photons with energy directly proportional to the dressing field. This scheme is tunable, compact, and shows a fair efficiency.
Spin diode is important prerequisite to practical manifestation of spin electronics. Yet, a functioning magnetic diode at room temperature is still illusive. Here, we reveal diode-type phenomena due to magnetic charge mediated conduction in artificial honeycomb geometry, made of concave shape single domain permalloy element. We find that honeycomb lattice defies symmetry by populating vertices with low and high multiplicity magnetic charges, causing asymmetric magnetization, in applied current of opposite polarity. High multiplicity units create highly resistive network, thereby inhibiting mag…
The density of states of proximitized normal nanowires interrupting superconducting rings can be tuned by the magnetic flux piercing the loop. Using these as the contacts of a single-electron transistor allows to control the energetic mirror asymmetry of the conductor, this way introducing rectification properties. In particular, we show that the system works as a diode that rectifies both charge and heat currents and whose polarity can be reversed by the magnetic field and a gate voltage. We emphasize the role of dissipation at the island. The coupling to substrate phonons enhances the effect…
We propose a spintronic device to generate spin polarization in a mesoscopic region by purely electric means. We show that the spin Hall effect in combination with the stirring effect are sufficient to induce measurable spin polarization in a closed geometry. Our device structure does not require the application of magnetic fields, external radiation or ferromagnetic leads, and can be implemented in standard semiconducting materials.
Recent experiments with electrolytes driven through conical nanopores give evidence of strong rectified current response. In such devices, the asymmetry in the confinement is responsible of the non-Ohmic response, suggesting that the interplay of entropic and enthalpic forces plays a major role. Here we propose a theoretical model to shed light on the physical mechanism underlying ionic current rectification (ICR). By use of an effective description of the ionic dynamics we explore the system's response in different electrostatic regimes. We show that the rectification efficiency, as well as t…
We propose a semiconductor device that can electrically generate entangled electron spin-photon states, providing a building block for entanglement of distant spins. The device consists of a p-i-n diode structure that incorporates a coupled double quantum dot. We show that electronic control of the diode bias and local gating allow for the generation of single photons that are entangled with a robust quantum memory based on the electron spins. Practical performance of this approach to controlled spin-photon entanglement is analyzed.
The role of polariton-electron scattering on the performance characteristics of an electrically injected GaAs-based quantum well microcavity diode in the strong coupling regime has been investigated. An electron gas is introduced in the quantum wells by modulation doping with silicon dopants. It is observed that polariton-electron scattering suppresses the relaxation bottleneck in the lower polariton branch. However, it is not adequate to produce a degenerate coherent condensate at k|| ~ 0 and coherent emission.
Ultrafast photon-assisted tunneling is shown to lead to large nonlinear dynamic currents that can be used to generate dc rectified current as well as higher order harmonic response from a metasurface-coupled tunnel diode. This artificial nonlinear media can have tailored resonances in the infrared around the longitudinal optical phonon modes of various compatible restrahlen oxides leading to enhanced electric field confinement in a metal-oxide-semiconductor tunnel diode. This provides a new avenue for the examination and design of nonlinear phenomena extending the concept of nonlinear suscepti…
We describe a new means for electrically creating spin polarization in semiconductors. In contrast to spin injection of electrons by tunneling through a reverse-biased Schottky barrier, we observe spin accumulation at the metal/semiconductor interface of forward-biased ferromagnetic Schottky diodes, which is consistent with a theory of spin-dependent reflection off the interface. Spatiotemporal Kerr microscopy is used to image the electron spin and the resulting dynamic nuclear polarization that arises from the non equilibrium carrier polarization.
We demonstrate electrical electron spin injection via interband tunneling in ferromagnetic/nonmagnetic semiconductor Esaki diodes. An interband tunnel junction between ferromagnetic p+-(Ga,Mn)As and nonmagnetic n+-GaAs under reverse-bias allows spin-polarized tunneling of electrons from the valence band of (Ga,Mn)As to the conduction band of n+-GaAs. The spin polarization of tunneled electrons is probed by circular polarization of electroluminescence (EL) from an n-GaAs/InGaAs/p-GaAs light emitting structure integrated with the diode. Clear hysteresis loop with +-6.5% remanence is observed in …
In the present study, we developed a fabrication process of an electrically driven single-photon LED based on InP QDs emitting in the red spectral range, the wavelength of interest coinciding with the high efficiency window of Si APDs. A deterministic lithography technique allowed for the pre-selection of a suitable QD, here exclusively operated under electrical carrier injection. The final device was characterized under micro-electroluminescence in direct current, as well as in pulsed excitation mode. In particular, under pulsed excitation of one device, single-photon emission of a spectral l…
Transition metal dichalcogenides (TMDs) are optically active layered materials providing potential for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localised sites in tungsten diselenide (WSe2) and tungsten disulphide (WS2). To achieve this, we fabricate a light emitting diode structure comprising single layer graphene, thin hexagonal boron nitride and TMD mono- and bi-layers. Photon correlation measurements are used to confirm the single-photon nature of the spectrally sharp emission. These results present the TMD family as a platf…
The realization of quantum computers and quantum Internet requires not only quantum gates and quantum memories, but also transistors at single-photon levels to control the flow of information encoded on single photons. Single-photon transistor (SPT) is an optical transistor in the quantum limit, which uses a single photon to open or block a photonic channel. In sharp contrast to all previous SPT proposals which are based on single-photon nonlinearities, here I present a novel design for a high-gain and high-speed (up to THz) SPT based on a linear optical effect - giant circular birefringence (…
Scalability and foundry compatibility (as for example in conventional silicon based integrated computer processors) in developing quantum technologies are exceptional challenges facing current research. Here we introduce a quantum photonic technology potentially enabling large scale fabrication of semiconductor-based, site-controlled, scalable arrays of electrically driven sources of polarization-entangled photons, with the potential to encode quantum information. The design of the sources is based on quantum dots grown in micron-sized pyramidal recesses along the crystallographic direction (1…
The coherent tunneling spin current in the bilayer system with spin-orbit coupling is investigated. Based on the continuity-like equations, we discuss the definition of the tunneling current and show that the overlaps between wavefunctions for different layers contribute to the tunneling current. We study the linear response of the tunneling spin current to an in-plane electric field in the presence of nonmagnetic impurities. The tunneling spin conductivity we obtained presents a feature asymmetrical with respect to the gate voltage when the strengthes of impurity potentials are different in e…
Quantifying the spin-spin interactions which influence electronic transitions in organic semiconductors is crucial for understanding their magneto-optoelectronic properties. By combining a theoretical model for three spin interactions in the coherent regime with pulsed electrically detected magnetic resonance experiments on MEH-PPV diodes, we quantify the spin-coupling within complexes comprising three spin-half particles. We determine that these particles form triplet-exciton:polaron pairs, where the polaron:exciton exchange is over 5 orders of magnitude weaker (less than 170 MHz) than that w…
We report the realization of an ultra-efficient low-temperature hybrid heat current rectifier, thermal counterpart of the well-known electric diode. Our design is based on a tunnel junction between two different elements: a normal metal and a superconducting island. Electronic heat current asymmetry in the structure arises from large mismatch between the thermal properties of these two. We demonstrate experimentally temperature differences exceeding $60$ mK between the forward and reverse thermal bias configurations. Our device offers a remarkably large heat rectification ratio up to $\sim 140…
Understanding of the electroluminescence (EL) mechanism in optoelectronic devices is important for further optimization of their efficiency and effectiveness. Here, a quantum mechanical approach is formulated for modeling EL processes in nanoscale light emitting diodes (LED). Based on nonequilibrium Green's function quantum transport equations, interactions with electromagnetic vacuum environment is included to describe electrically driven light emission in the devices. Numerical studies of a silicon nanowire LED device are presented. EL spectra of the nanowire device under different bias volt…
For the development of long-distance quantum networks, sources of single photons and entangled photon pairs emitting in the low-loss wavelength region around 1550 nm are a crucial building block. Here we show that quantum dot devices based on indium phosphide are capable of electrically injected single photon emission in this wavelength region with multiphoton events suppressed down to 0.11$\pm$0.02. Using the biexciton cascade mechanism, they further produce entangled photons with a fidelity of 87$\pm$4%, sufficient for the application of one-way error correction protocols. The new material a…
