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arXiv 0905.2799cond-mat.mtrl-sci
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氧化石墨烯中绝缘体到半金属的转变

Insulator to semi-metal transition in graphene oxide

Goki Eda, Cecilia Mattevi, Hisato Yamaguchi, HoKwon Kim, Manish Chhowalla

摘要:

描述了渐进还原的氧化石墨烯(GO)的输运性质。电子性质的演变表明,合成的GO经历绝缘体-半导体-半金属的转变与还原。表观输运能隙范围为10 ~ 50 meV,随着能量的减小,能隙趋于零.在不同程度的减少的测量表明,减少GO的运输发生通过可变范围的跳跃和进一步减少导致可用的跳频站点的数量增加。

英文摘要:

Transport properties of progressively reduced graphene oxide (GO) are described. Evolution of the electronic properties reveals that as-synthesized GO undergoes insulator-semiconductor-semi-metal transitions with reduction. The apparent transport gap ranges from 10 ~ 50 meV and approaches zero with extensive reduction. Measurements at varying degrees of reduction reveal that transport in reduced GO occurs via variable-range hopping and further reduction leads to increased number of available hopping sites.

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