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arXiv 0905.0935hep-th
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Born-Infeld型幻影暗能量模型的参数化

Parametrization of Born-Infeld Type Phantom Dark Energy Model

Z. G. Huang, H. Q. Lu, W. Fang

摘要:

利用暗能量密度的参数化,我们可以直接构造独立模型势。在Born-Infeld型幻影暗能量模型中,我们考虑了四种特殊的参数化状态方程参数。从数学上给出了暗能量密度相对于红移$z$、势相对于$ϕ$和$z$的演化行为。此外,我们研究了参数$η$对构造势相对于$z$演化的影响。这些结果表明,所构造的Born-Infeld型暗能量模型的演化行为与其它模型有很大的不同。

英文摘要:

Applying the parametrization of dark energy density, we can construct directly independent-model potentials. In Born-Infeld type phantom dark energy model, we consider four special parametrization equation of state parameter. The evolutive behavior of dark energy density with respect to red-shift $z$, potentials with respect to $ϕ$ and $z$ are shown mathematically. Moreover, we investigate the effect of parameter $η$ upon the evolution of the constructed potential with respect to $z$. These results show that the evolutive behavior of constructed Born-Infeld type dark energy model is quite different from those of the other models.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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