arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 0904.2364cond-mat.mes-hallcond-mat.mtrl-sci
收藏

用三端弹道载流子光谱法测定半导体异质结构的带隙和带偏

Bandgap and Band Offsets Determination of Semiconductor Heterostructures using Three-terminal Ballistic Carrier Spectroscopy

Wei Yi, Hong Lu, Yong Huang, Michael A. Scarpulla, Jae-Hyun Ryou, Arthur C. Gossard, Russell D. Dupuis, Venkatesh Narayanamurti

摘要:

利用弹道电子和空穴的三端隧道发射,我们已经开发了一种方法来自洽地测量半导体的带隙和半导体异质结的带不连续性,而无需任何先决条件的材料参数。对晶格匹配的GaAs/AlxGa 1-xAs和GaAs/(AlxGa 1-x)0.51In 0.49P单势垒异质结进行了测量。在4.2 K下测量了AlGaAs和AlGaInP的带隙,分辨率为几meV。对于GaAs/AlGaAs界面,测得的伽马带偏移比为60.4:39.6(+/-2%)。对于GaAs/AlGaInP界面,该比率随Al摩尔分数而变化,并且更多地分布在价带中。一个非单调的Al组分依赖的GaAs/AlGaInP界面处的导带偏移观察间接间隙制度。

英文摘要:

Utilizing three-terminal tunnel emission of ballistic electrons and holes, we have developed a method to self-consistently measure the bandgap of semiconductors and band discontinuities at semiconductor heterojunctions without any prerequisite material parameter. Measurements are performed on lattice-matched GaAs/AlxGa1-xAs and GaAs/(AlxGa1-x)0.51In0.49P single-barrier heterostructures. The bandgaps of AlGaAs and AlGaInP are measured with a resolution of several meV at 4.2 K. For the GaAs/AlGaAs interface, the measured Gamma band offset ratio is 60.4:39.6 (+/-2%). For the GaAs/AlGaInP interface, this ratio varies with the Al mole fraction and is distributed more in the valence band. A non-monotonic Al composition dependence of the conduction band offset at the GaAs/AlGaInP interface is observed in the indirect-gap regime.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑