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arXiv 0903.1687cond-mat.str-elcond-mat.mtrl-sci
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锰氧化物薄膜中由3d电子行程控制的轨道有序畴尺寸

Size of Orbital Ordering Domain Controlled by the Itinerancy of the 3d Electrons in a Manganite Thin Film

Y. Wakabayashi, H. Sagayama, T. Arima, M. Nakamura, Y. Ogimoto, Y. Kubo, K. Miyano, H. Sawa

摘要:

在SrTiO_3(011)面上生长的强关联半掺杂锰氧化物薄膜Nd $_{0.5}$ Sr $_{0.5}$ MnO_3中发现了宏观畴结构的电子效应。该样品具有一个在180 K以上没有变形的高温(HT)相和两个具有大剪切模式应变和伴随的孪生结构的低温(LT)相。一个LT相位具有大的巡游(A型),另一个具有小的巡游(CE型),而它们引起的晶格畸变几乎相等。我们的X射线衍射测量表明,由HT-CE转变所形成的LT相的畴尺寸远小于由HT-A转变所形成的,这表明畴尺寸的差异是由LT相的电子态所引起的。

英文摘要:

An electronic effect on a macroscopic domain structure is found in a strongly correlated half-doped manganite film Nd$_{0.5}$Sr$_{0.5}$MnO3 grown on a (011) surface of SrTiO3. The sample has a high-temperature (HT) phase free from distortion above 180K and two low-temperature (LT) phases with a large shear-mode strain and a concomitant twin structure. One LT phase has a large itinerancy (A-type), and the other has a small itinerancy (CE-type), while the lattice distortions they cause are almost equal. Our x ray diffraction measurement shows that the domain size of the LT phase made by the HT-CE transition is much smaller than that by the HT-A transition, indicating that the difference in domain size is caused by the electronic states of the LT phases.

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