Multilayers of hydrogenated ultrathin (3 nm) amorphous a-Si and a-Ge layers prepared by sputtering have been studied by atomic force microscopy (AFM) and transmission electron microscopy (TEM) to check the influence of annealing on their structural stability. The annealed multilayers exhibit surface and bulk degradation with formation of bumps and craters whose density and size increase with increasing hydrogen content and/or annealing temperature and time. Bumps are due to the formation of H2 bubbles in the multilayer. The craters are bumps blown up very likely because of too high a gas pressure inside. The release of H from its bonds to Si and Ge occurs within cavities very likely present in the samples. The necessary energy is supplied by the heat treatment and by the recombination of thermally generated carriers. Results by energy filtered TEM on the interdiffusion of Si and Ge upon annealing are also presented.
The present work is essentially focused on the study of optical and structural properties of hydrogenated amorphous silicon thin films (a-Si:H) prepared by radio-frequency cathodic sputtering. We examine separately the influence of hydrogen partial pressure during film deposition, and the effect of post-deposition thermal annealings on the main optical characteristics of the layers such as refraction index, optical gap and Urbach energy. Using the grazing X-rays reflectometry technique, thin film structural properties are examined immediately after films deposition as well as after surface oxi…
Ta (100 nm) / NdFeB (5 $μ$m) / Ta (100 nm) films have been deposited onto Si substrates using triode sputtering (deposition rate ~ 18 $μ$m/h). A 2-step procedure was used : deposition at temperatures up to 400 C followed by ex-situ annealing at higher temperatures. Post-deposition annealing temperatures above 650 C are needed to develop high values of coercivity. The duration of the annealing time is more critical in anisotropic samples deposited onto heated substrates than in isotropic samples deposited at lower temperatures. For a given set of annealing conditions (750 C/ 10'), high heating …
The evolution is presented of infrared transmission spectra of hydrogenated and chlorinated amorphous silicon films versus the chlorine concentration and the annealing temperature. As the chlorine content increases, an increase of the 2100 cm-1 band intensity is observed. We associate this effect with the existence of SiH2CI2, mixed configurations. The Sic1 stretching band, located at 545 cm-1 in unannealed samples, shifts continuously up to 590 cm-1 as the annealing temperature increases. This displacement is attributed to a predominance of SiCI2, species around 500°C and their transformation…
A thermally induced templated synthesis for SiC nanotubes and nanofibers using ammonia or nitrogen as a carrier gas, single wall carbon nanotubes (SWCNT) as templates as well as gaseous Si is presented. The bundles of SWCNT act as both the carbon source and as a nanoframe from which SiC structuctures form. Depending on the duration of the thermally induced templated reaction, for a fixed temperature, carrier gas, and gas pressure, various SiC nanostructures are obtained. These structures include SiC nanorods coated in C, SiC nanorods, SiC nanotubes, and SiC nanocrytals. From our analysis using…
Copper ferrite thin films were rf sputtered at a power of 50W. The as deposited films were annealed in air at 800°C and slow cooled. The transmission electron microscope (TEM) studies were carried out on as deposited as well as on slow cooled film. Significantly larger defect concentration, including stacking faults, was observed in 50W as deposited films than the films deposited at a higher rf power of 200W. The film annealed at 800°C and then slow cooled showed an unusual grain growth upto 180nm for a film thickness of ~240nm. These grains showed Kikuchi pattern.
Hydrogenation and posthydrogenation annealings have been used as a very efficient tool to tune the hole density over a wide range, at fixed magnetic moment concentration, in thin GaMnAs layers. Reduction of the hole density resulted in strong modifications of their ferromagnetic properties. In particular, we observed in magnetotransport experiments the decrease of the Curie temperature, along with modifications of the magnetic anisotropy, a behavior consistent with the mean-field theory.
A study is presented of the structural changes occurring as a function of the annealing conditions in hydrogenated amorphous Si/Ge multilayers prepared by sputtering. Annealing changes the structure of the as-deposited multilayer except for the less severe conditions here applied (150 oC, time<22 h). For higher temperatures and/or times, the modifications consist of layer intermixing and surface degradation in the shape of bumps and craters. They are argued to be due to the formation of H bubbles upon heating. Hydrogen should be mostly released from the amorphous Ge layers.
We investigated the dependence of giant tunnel magnetoresistance (TMR) on the thickness of an MgO barrier and on the annealing temperature of sputtered CoFeB/MgO/CoFeB magnetic tunnel junctions deposited on SiO2/Si wafers. The resistance-area product exponentially increases with MgO thickness, indicating that the quality of MgO barriers is high in the investigated thickness range of 1.15-2.4 nm. High-resolution transmission electron microscope images show that annealing at 375 C results in the formation of crystalline CoFeB/MgO/CoFeB structures, even though CoFeB electrodes are amorphous in th…
Thermal stability of hydrogenated amorphous Si/Ge multilayers has been investigated by Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Small-Angle X-Ray Diffraction (SAXRD) techniques. Amorphous H-Si/Ge multilayers were prepared by RF sputtering with 1.5 and 6 ml/min H2 flow-rate. It is shown by Elastic Recoil Detection Analysis (ERDA) that the hydrogen concentration increased by increasing H2 flow-rate. Annealing of the samples was carried out at 400 and 450 oC for several hours. It has been observed that samples prepared with 6 ml/min flow-rate at both annealin…
The Hydrogenated Diamond Like Carbon (HDLC) thin films are deposited on Silicon substrate at room temperature using asymmetric capacitively coupled RF plasma with varying flow rates of methane. These films are undergone annealing at high vacuum and high temperature furnace. The as-prepared and annealed HDLC films have been depth profiled for hydrogen using the resonance at 6.44 MeV in nuclear reaction between fluoride ion beam and HDLC. The as prepared films exhibit non-uniform depth distribution of hydrogen: it decreases with depth. Annealing in vacuum brings about a significant desorption of…
The current paper mainly addresses the effect of the hydrogen partial pressure on the microstructure and transformation of the Ag$_2$O film. The transformation process and mechanism were also analyzed in detail. Increasing the hydrogen partial pressure can accelerate the transformation of Ag$_2$O to Ag and lower the critical transformation temperature of the film due to the enhanced hydrogen reduction, and to both of the lowered activation energy of the reaction of Ag$_2$O with hydrogen and enhanced lattice strain of the Ag$_2$O film, respectively. Hydrogen-involved reaction in the whole hydro…
Magnetic ordering in topological insulators (TI) is crucial for breaking time-reversal symmetry (TRS) and thereby opening a gap in the topological surface states (TSSs) [1-6], which is the key for realizing useful topological properties such as the quantum anomalous Hall (QAH) effect, axion insulator state and the topological magnetoelectric effect. Combining TIs with magnetic materials can be expected to yield interfaces [26-28] with unique topological and magnetic phases but such interfaces largely remain unexplored. Here, we report the discovery of a novel antiferromagnetic (AFM) Van der Wa…
La-based perovskites are a versatile class of materials that are of interest for solid oxide fuel cells and electrocatalytic water splitting. During fabrication of composition spread materials libraries of La-Co-based oxide systems for the discovery of new catalytic materials, an unusual phase formation phenomenon was observed: instead of the expected continuous composition gradient, regions with homogeneous composition and single-phase structure (La2O3 or stoichiometric La-perovskite) form. This phenomenon occurs during reactive co-sputtering and is dependent on O2-flux and substrate temperat…
Specific heat measurements of hydrogenated amorphous silicon prepared by hot-wire chemical vapor deposition show a large density of two-level systems at low temperature. Annealing at 200 °C, well below the growth temperature, does not significantly affect the already-low internal friction or the sound velocity, but irreversibly reduces the non-Debye specific heat by an order of magnitude at 2 K, indicating a large reduction of the density of two-level systems. Comparison of the specific heat to the internal friction suggests that the two-level systems are uncharacteristically decoupled from ac…
Nb3Sn and V3Si thin films are promising candidates as thin films for the next generation of superconducting radio-frequency (SRF) cavities. However, sputtered films often suffer from stoichiometry and strain issues during deposition and post annealing. In this study, we explore the structural and chemical effects of thermal annealing, both in-situ and post-sputtering, on DC-sputtered Nb3Sn and V3Si films of varying thickness on Nb or Cu substrates, extending from our initial studies [1]. Through annealing at 950 °C, we successfully enabled recrystallization of 100 nm thin Nb3Sn films on Nb sub…
Coatings of (Al1-xVx)2O3, with x ranging from 0 to 1, were deposited by pulsed DC reactive sputter deposition on Si(100) at a temperature of 550 °C. XRD showed three different crystal structures depending on V-metal fraction in the coating: α-V2O3 rhombohedral structure for 100 at.% V, a defect spinel structure for the intermediate region, 63 - 42 at.% V. At lower V-content, 18 and 7 at.%, a gamma-alumina-like solid solution was observed, shifted to larger d-spacing compared to pure γ-Al2O3. The microstructure changes from large columnar faceted grains for α-V2O3 to smaller equiaxed grains whe…
In the paper a theoretical study of critical (Curie) temperature of diluted ferromagnet based on multilayer graphene (or graphite) with hydrogen adatoms deposited over carbon atoms belonging to single sublattice is presented. The calculations are performed within Pair Approximation (PA) for diluted ferromagnetic system with long-range interactions. The method is able to take into account the spin-space anisotropy of coupling. The results obtained within Mean Field Approximation (MFA) are also presented for comparison. The assumed interaction between hydrogen adatom spins is inversely proportio…
Using combined low temperature scanning tunneling microscopy (STM) and atomic force microscopy (AFM), we demonstrate hydrogen passivation of individual, selected dangling bonds (DBs) on a hydrogen-passivated Si(100)-2$\times$1 surface (H-Si) by atom manipulation. This method allows erasing of DBs and thus provides an error-correction scheme for hydrogen lithography. Si-terminated tips (Si tips) for hydrogen desorption and H-terminated tips (H tips) for hydrogen passivation are both created by deliberate contact to the H-Si surface and are assigned by their characteristic contrast in AFM. DB pa…
Monophasic and homogeneous Ni10Zr7 nanocrystalline alloy films were successfully grown at room temperature by co-sputtering in an indigenously developed three-gun DC/RF magnetron sputtering unit. The films could be produced with long-range crystallographic and chemical order in the alloy, thus overcoming the widely acknowledged inherent proclivity of the glass forming Ni-Zr couple towards amorphization. Crystallinity of these alloys is a desirable feature with regard to improved efficacy in applications such as hydrogen storage, catalytic activity and nuclear reactor engineering, to name a few…
We report on the development and extensive characterization of co-sputtered tantala-zirconia thin films, with the goal to decrease coating Brownian noise in present and future gravitational-wave detectors. We tested a variety of sputtering processes of different energies and deposition rates, and we considered the effect of different values of cation ratio $η=$ Zr/(Zr+Ta) and of post-deposition heat treatment temperature $T_a$ on the optical and mechanical properties of the films. Co-sputtered zirconia proved to be an efficient way to frustrate crystallization in tantala thin films, allowing f…
