同步辐射研究InP（1 0 0）表面的氮化
Nitridation of InP(1 0 0) surface studied by synchrotron radiation
摘要：
用同步辐射光电子能谱研究了InP（100）表面的氮化。对样品进行化学清洗，然后进行离子轰击，这清洁了表面，也诱导了金属铟液滴的形成。利用辉光放电单元（GDS）的氮化通过与这些铟簇反应产生氮化铟。我们使用In 4d和P 2 p核心水平来监测表面的化学状态和存在的物种的覆盖率。我们观察到In-N键和P-N键的产生，而In-In金属键的减少，证实了铟团簇与氮物种之间的反应。基于堆叠层的理论模型允许我们断言，几乎两个单层的氮化铟产生。还分析了在450 $^\circ$ C下退火对氮化层的影响。似乎该系统在该温度下是稳定的，该温度远高于清洁InP（1 0 0）的全等蒸发温度（370 $^\circ$ C）：没有检测到由于衬底分解而导致的金属铟键的增加，如先前的工作[L.比德湖乌尔德-梅蒂吉湾Gruzza，V. Matolin，Surf.接口分析34（2002）712]研究InP（100）表面。
英文摘要：
The nitridation of InP(1 0 0) surfaces has been studied using synchrotron radiation photoemission. The samples were chemically cleaned and then ion bombarded, which cleaned the surface and also induced the formation of metallic indium droplets. The nitridation with a Glow Discharge Cell (GDS) produced indium nitride by reaction with these indium clusters. We used the In 4d and P 2p core levels to monitor the chemical state of the surface and the coverage of the species present. We observed the creation of In-N and P-N bonds while the In-In metallic bonds decrease which confirm the reaction between indium clusters and nitrogen species. A theoretical model based on stacked layers allows us to assert that almost two monolayers of indium nitride are produced. The effect of annealing on the nitridated layers at 450 $^\circ$C has also been analysed. It appears that this system is stable up to this temperature, well above the congruent evaporation temperature (370 $^\circ$C) of clean InP(1 0 0): no increase of metallic indium bonds due to decomposition of the substrate is detected as shown in previous works [L. Bideux, Y. Ould-Metidji, B. Gruzza, V. Matolin, Surf. Interface Anal. 34 (2002) 712] studying the InP(1 0 0) surfaces.
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