用AES、EELS和EPES研究InP（1 0 0）表面氮化的第一阶段
First stages of the InP(1 0 0) surfaces nitridation studied by AES, EELS and EPES
摘要：
III族金属氮化物AlN、GAN和InN由于其在短波长光电子学（发光二极管和激光二极管）中的应用而成为非常重要的材料。生长高质量的氮化物单晶是实现这种新型器件的关键。在本文中，我们报告的第一阶段的InP（1 0 0）表面氮化，以生长高品质的氮化物薄膜。实际上，氮化过程是氮化物生长中的重要步骤[J. Vac. Sci. A 17（1999）2194; Phys. Status Solidi A 176（1999）595]。以前的作品[Synth. Met. 90（1997）2233; Appl.Phys.Lett. 63（1993）1957]已经表明，原位Ar+离子轰击一方面可用于清洁表面，另一方面可用于产生良好控制量的金属铟液滴。然后，通过弹性峰值电子能谱（EPES）和俄歇电子能谱（AES）监测的表面的铟金属富集允许将III-V族半导体表面制备到氮化步骤。氮化过程已进行了高压等离子体放电单元，并已研究使用定量俄歇电子能谱，弹性峰电子能谱和电子能量损失谱（EELS），以优化InN层形成的条件。
英文摘要：
The nitrides of group III metals: AlN, GaN and InN are very important materials due to their applications for short wavelength opto-electronics (light-emitting diodes and laser diodes). It is essential for the realization of such novel devices to grow high-quality nitride single crystals. In this paper, we report the first stages of the InP(1 0 0) surfaces nitridation in order to grow high-quality nitride films. Indeed, the nitridation process is an important step in the growth of nitrides [J. Vac. Sci. Technol. A 17 (1999) 2194; Phys. Status Solidi A 176 (1999) 595]. Previous works [Synth. Met. 90 (1997) 2233; Appl. Phys. Lett. 63 (1993) 1957] have shown that in situ Ar+ ions bombardment is useful on the one hand to clean the surface, and on the other hand to create droplets of metallic indium in well-controlled quantity. Then the indium metallic enrichment of the surface, monitoring by elastic peak electron spectroscopy (EPES) and Auger electron spectroscopy (AES) allows to prepare the III-V semiconductors surfaces to the nitridation step. The nitridated process has been performed with a high voltage plasma discharge cell and has been studied using quantitative Auger electron spectroscopy, elastic peak electron spectroscopy and electron energy loss spectroscopy (EELS), in order to optimize the conditions of InN layers formation.
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