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arXiv 0812.4038cond-mat.mes-hall
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石墨烯纳米带中电子的静电约束

Electrostatic confinement of electrons in graphene nano-ribbons

Xinglan Liu, Jeroen B. Oostinga, Alberto F. Morpurgo, Lieven M. K. Vandersypen

摘要:

在具有顶栅的石墨烯纳米器件中观察到库仑阻塞。当经由背栅和局部顶栅形成两个PN结时,电子被限制在充当势垒的PN结之间。当栅极电压没有感应出PN结时,由于强无序,电子仍然被限制,但是在更大的区域中。在其他五个不同尺寸的设备上进行测量,得到了一致的结果。

英文摘要:

Coulomb blockade is observed in a graphene nanoribbon device with a top gate. When two pn junctions are formed via the back gate and the local top gate, electrons are confined between the pn junctions which act as the barriers. When no pn junctions are induced by the gate voltages, electrons are still confined, as a result of strong disorder, but in a larger area. Measurements on five other devices with different dimensions yield consistent results.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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