碳纳米管复合膜上GaAs纳米线的生长与表征：柔性纳米器件
Growth and characterization of GaAs nanowires on carbon nanotubes composite films: toward flexible nanodevices
摘要：
采用真空抽滤法制备了聚乙烯亚胺功能化碳纳米管薄膜，并在温和条件下用HAuCl 4原位还原法制备了Au纳米粒子修饰碳纳米管薄膜。这些Au纳米粒子随后被用于GaAs纳米线（NWs）的气-液-固过程中的气体源分子束外延系统的生长。该过程导致GaAs纳米线在单壁纳米管（SWNT）膜的整个表面上密集生长。纳米线，这是在各种角度相对于单壁碳纳米管薄膜取向，直径范围在20至200 nm之间，高度高达2.5 μ m。透射电子显微镜分析的NW-SWNT接口表明，NW生长的纳米管复合膜的表面上发起。一个单一的NW标本的光致发光特性表现出很高的光学质量。整流不对称的电流-电压行为观察到接触NW合奏，并归因于核壳pn结内的NW。这种新型混合架构的潜在应用包括柔性太阳能电池、显示器和传感器。
英文摘要：
Poly(ethylene imine) functionalized carbon nanotube thin films, prepared using the vacuum filtration method, were decorated with Au nanoparticles by in situ reduction of HAuCl4 under mild conditions. These Au nanoparticles were subsequently employed for the growth of GaAs nanowires (NWs) by the vapor-liquid-solid process in a gas source molecular beam epitaxy system. The process resulted in the dense growth of GaAs NWs across the entire surface of the single-walled nanotube (SWNT) films. The NWs, which were orientated in a variety of angles with respect to the SWNT films, ranged in diameter between 20 to 200 nm, with heights up to 2.5 um. Transmission electron microscopy analysis of the NW-SWNT interface indicated that NW growth was initiated upon the surface of the nanotube composite films. Photoluminescence characterization of a single NW specimen showed high optical quality. Rectifying asymmetric current-voltage behavior was observed from contacted NW ensembles and attributed to the core-shell pn-junction within the NWs. Potential applications of such novel hybrid architectures include flexible solar cells, displays, and sensors.
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