乙炔-氩等离子体在偏压衬底电极上测量类金刚石碳沉积。第2部分：离子能量分布
Acetylene - Argon Plasmas Measured at a Biased Substrate Electrode for Diamond-Like Carbon Deposition. Part 2: Ion Energy Distributions
摘要：
离子能量分布已被确定在射频偏置电极在电感耦合乙炔-氩等离子体在各种基板偏压和频率下的条件下适合薄膜沉积。这些是比较在接地的电容耦合等离子体的壁。在前者中，对于高达25 mTorr的压力，IED表现出双峰结构，峰值分离值，遵循预期的依赖于电压和频率。在较高的压力下，120毫托，双峰结构被取代的单峰。对于所有条件，尽管设定C2 H2：Ar流量比为2：1，但主要离子为Ar+或ArH+，这可归因于母体分子的高电子解离。类金刚石碳膜在约90 eV的离子能量处显示出峰值硬度，并且在超过该值时注意到硬度的非常急剧的下降。这是类似于所观察到的轰击能量的sp3键的形成在无氢的tetrahydroxide非晶碳或偏压溅射膜的关系。然而，由于缺乏碳基离子，必须考虑替代的膜生长机制，可能基于表面吸附的碳物质的氩气撞击注入。结果表明，使用高频偏置或偏置谐波可以导致窄得多的离子能量分布。
英文摘要：
Ion energy distributions have been determined at the rf-bias electrode in an inductively-coupled acetylene-argon plasma for various substrate bias voltages and frequencies under conditions suitable for film deposition. These are compared with those obtained at the grounded wall of a capacitively coupled plasma. In the former, for pressures up to 25 mTorr, the IEDs exhibit bimodal structures with peak separation values that follow the expected dependence on voltage and frequency. At higher pressures, 120 mTorr, the bimodal structure is replaced by a single peak. For all conditions, the dominant ion is Ar+ or ArH+ despite a set C2H2:Ar flow ratio of 2:1, and this can be attributed to the high electron dissociation of the parent molecule. Diamond-like carbon films indicate a peak hardness at an ion energy of around 90 eV and a very sharp fall in hardness is noted beyond this value. This is similar to the observed bombardment energy relationship for sp3 bond formation in hydrogen-free tetragonal amorphous carbon or bias-sputtered films. However, due to the lack of carbon-based ions, an alternative film growth mechanism must be considered, possibly based on argon knock-on implantation of surface adsorbed carbon species. The results have shown that the use of high frequency bias or bias harmonics may lead to much narrower ion energy distributions.
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