石墨烯的可逆基面氢化
Reversible Basal Plane Hydrogenation of Graphene
摘要：
我们报道了单层石墨烯与氢原子的化学反应，所述氢原子是通过电子诱导的氢倍半硅氧烷（HSQ）解离原位产生的。氢化，在石墨烯的基面上形成sp3 C-H官能团，单层比双层以更高的速率进行，证明了单层石墨烯的增强的化学反应性。在300 K下，单层上的净H原子粘附概率至少为0.03，这超过双层的至少15倍。化学吸附的氢原子在100~200 ℃的温度下热退火可使其脱离，并产生明显的拉曼D带。当光热加热时，所得到的脱氢石墨烯被“活化”，其可逆地结合环境氧，导致石墨烯的空穴掺杂。石墨烯的这种功能化可以用来操纵石墨烯器件的电子和电荷传输特性。
英文摘要：
We report the chemical reaction of single-layer graphene with hydrogen atoms, generated in situ by electron-induced dissociation of hydrogen silsesquioxane (HSQ). Hydrogenation, forming sp3 C-H functionality on the basal plane of graphene, proceeds at a higher rate for single than for double layers, demonstrating the enhanced chemical reactivity of single sheet graphene. The net H atom sticking probability on single layers at 300 K is at least 0.03, which exceeds that of double layers by at least a factor of 15. Chemisorbed hydrogen atoms, which give rise to a prominent Raman D band, can be detached by thermal annealing at 100~200 degrees C. The resulting dehydrogenated graphene is "activated" when photothermally heated it reversibly binds ambient oxygen, leading to hole doping of the graphene. This functionalization of graphene can be exploited to manipulate electronic and charge transport properties of graphene devices.
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