多组分半导体中Light Absorption的特性和自由电子的发射
Peculiarities of the Light Absorption and Emission by Free Electrons in Multivalley Semiconductors
摘要：
本文给出了自由载流子的光吸收系数和热电子的自发发光强度的一般表达式。这些表达式依赖于各个谷中的电子浓度和电子温度。考虑到色散规律和电子散射机制的各向异性。杂质相关和声散射机制进行了分析。发现了超热电子的自发发射与极化的关系。在单向加压或高辐照强度下，自由电子的光吸收系数也表现出偏振依赖性。
英文摘要：
General expressions are obtained for the coefficient of light absorption by free carriers as well as the intensity of the spontaneous light emission by hot electrons in multivalley semiconductors. These expressions depend on the electron concentration and electron temperature in the individual valleys. An anisotropy of the dispersion law and electron scattering mechanisms is taken into account. Impurity-related and acoustic scattering mechanisms are analyzed. Polarization dependence of the spontaneous emission by hot electrons is found out. At unidirectional pressure applied or high irradiation intensities, the polarization dependence also appears in the coefficient of light absorption by free electrons.
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