多通道半导体中热电子的光发射和吸收（TERAHERTZ范围）
Emission and Absorption of Light by Hot Electrons in Multivalley Semiconductors (TERAHERTZ Range)
摘要：
本文以$n$ -Ge为例，从理论和实验上研究了多道半导体中超热电子自发发射的角度依赖性。我们证明了由电子温度的增长引起的散射机制的变化可以影响角散射依赖性。当加热场沿晶体的对称轴[对$n$ -Ge为（1，0，0，）轴]施加时，首次在实验上观察到了发射的角度依赖性，并提出了相应的理论。当电子在每个谷区具有相同的浓度和温度时，发射的角度依赖性与电子能量分布对称性的破坏有关（从理论上讲，这种效应意味着超出了传统扩散近似的范围）。
英文摘要：
The angular dependences of the spontaneous emission by hot electrons in multivalley semiconductors are studied theoretically and experimentally using $n$-Ge as an example. We demonstrate that the change in the scattering mechanism caused by the growth of electron temperature can affect the angular scattering dependence. In the case when the heating field is applied along the symmetry axis of the crystal [for $n$-Ge it is the axis (1,0,0,)], the angular dependence of the emission was observed experimentally for the first time, and the corresponding theory is proposed. When electrons have identical concentration and temperature in every valley, the angular dependence of emission is shown to be related to the violation of symmetry of the energy distribution of electrons (from the theoretical viewpoint, this effect means going beyond the scope of the traditional diffusion approximation).
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