体GaAs、GaN和ZnO半导体微腔中强耦合区的比较
Comparison of strong coupling regimes in bulk GaAs, GaN and ZnO semiconductor microcavities
摘要：
宽带隙半导体是室温下工作的基于极化激元的器件的有吸引力的候选者。我们提出了体GaAs，GAN和ZnO微腔的反射率，透射率和吸收光谱的数值模拟，以比较在每个系统中的强耦合制度的特殊性。实际上，这些材料中激子的固有性质导致价带分裂、有效Rydberg和Rabi能量之间的不同能量等级，从而独立于腔的品质因数定义激子-极化激元状态的特性。极化激元本征态的组成的知识是中央优化这样的系统。我们表明，在ZnO体微腔，只有较低的极化激元是良好的本征态和所有其他的共振阻尼，而上极化激元可以适当地定义在GaAs和GAN微腔。
英文摘要：
Wide bandgap semiconductors are attractive candidates for polariton-based devices operating at room temperature. We present numerical simulations of reflectivity, transmission and absorption spectra of bulk GaAs, GaN and ZnO microcavities, in order to compare the particularities of the strong coupling regime in each system. Indeed the intrinsic properties of the excitons in these materials result in a different hierarchy of energies between the valence-band splitting, the effective Rydberg and the Rabi energy, defining the characteristics of the exciton-polariton states independently of the quality factor of the cavity. The knowledge of the composition of the polariton eigenstates is central to optimize such systems. We demonstrate that, in ZnO bulk microcavities, only the lower polaritons are good eigenstates and all other resonances are damped, whereas upper polaritons can be properly defined in GaAs and GaN microcavities.
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