GaAs-based半导体微腔中极化激元态的电致发光
Electroluminescence emission from polariton states in GaAs-based semiconductor microcavities
摘要：
作者报道了在强耦合区观察到的GaAs基半导体微腔的电致发光。在低电流密度下，发射由两个峰组成，其表现出作为检测角的函数的反交叉行为，因此源自极化激元状态。随着载流子注入的增加，我们观察到一个渐进的过渡，从强耦合到弱耦合由于自由载流子的激子共振的屏蔽。电注入激发极化激元发射的实验结果对极化激元激光器的未来发展具有重要意义。
英文摘要：
The authors report the observation of electroluminescence from GaAs-based semiconductor microcavities in the strong coupling regime. At low current densities the emission consists of two peaks, which exhibit anti-crossing behaviour as a function of detection angle and thus originate from polariton states. With increasing carrier injection we observe a progressive transition from strong to weak coupling due to screening of the exciton resonance by free carriers. The demonstration that polariton emission can be excited by electrical injection is encouraging for future development of polariton lasers.
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