arXiv 0810.07982008-10cond-mat.str-elcond-mat.mtrl-sci

Quantum Wells in Polar-Nonpolar Oxide Heterojunction Systems

C. -C Joseph Wang, Bhagawan Sahu, Hongki Min, Wei-Cheng Lee, Allan H. MacDonald

备注：: 9 pages, 1 tex file and 15 figures(Final version for Physical Review B)
发表信息：: Phys. Rev. B 79, 115408 (2009)
DOI：: 10.1103/PhysRevB.79.115408

英文摘要：

We address the electronic structure of quantum wells in polar-nonpolar oxide heterojunction systems focusing on the case of non-polar BaVO$_3$ wells surrounded by polar LaTiO$_3$ barriers. Our discussion is based on a density functional description using the local spin density approximation with local correlation corrections (LSDA+U). We conclude that a variety of quite different two-dimensional electron systems can occur at interfaces between insulating materials depending on band line-ups and on the geometrical arrangement of polarity discontinuities.

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