Universal Non-Polar Switching in Carbon-doped Transition Metal Oxides (TMOs) and Post TMOs
C. A. Paz de Araujo, Jolanta Celinska, Chris R. McWilliams, Lucian Shifren, Greg Yeric, X. M. Henry Huang, Saurabh Vinayak Suryavanshi, Glen Rosendale, Valeri A… 展开作者
C. A. Paz de Araujo, Jolanta Celinska, Chris R. McWilliams, Lucian Shifren, Greg Yeric, X. M. Henry Huang, Saurabh Vinayak Suryavanshi, Glen Rosendale, Valeri Afanas'ev, Eduardo C. Marino, Dushyant Madhav Narayan, Daniel S Dessau
Transition metal oxides (TMOs) and post-TMOs (PTMOs), when doped with Carbon, show non-volatile current-voltage (I-V) characteristics, which are both universal and repeatable. We have shown spectroscopic evidence of the introduction of carbon-based impurity states inside the existing larger bandgap effectively creating a smaller bandgap which we suggest could enable Mott-like correlation effect. Our findings indicate new insights for yet to be understood unipolar and nonpolar resistive switching in the TMOs and PTMOs. We have shown that device switching is not thermal-energy dependent and have developed an electronic-dominated switching model that allows for the extreme temperature operation (from 1.5 K to 423 K) and state retention up to 673 K for a 1-hour bake. Importantly, we have optimized the technology in an industrial process and demonstrated integrated 1-transistor/1-resistor (1T1R) arrays up to 1 kbit with 47 nm devices on 300 mm wafers for advanced node CMOS-compatible correlated electron RAM (CeRAM). These devices are shown to operate with 2 ns write pulses and retain the memory states up to 200 C for 24 hours. The collection of attributes shown, including scalability to state-of-the-art dimensions, non-volatile operation to extreme low and high temperatures, fast write, and reduced stochasticity as compared to filamentary memories such as ReRAMs show the potential for a highly capable two-terminal back-end-of-line non-volatile memory.
Tuning exciton emission via ferroelectric polarization at a heterogeneous interface between a monolayer transition metal dichalcogenide and a perovskite oxide membrane
Thermally Configurable Multi-Order Polar Skyrmions in Multiferroic Oxide Superlattices
State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University（浙江大学材料科学与工程学院硅与先进半导体材料省部共建国家重点实验室）；Zhejiang Key Laboratory of Advanced Solid State Energy Storage Technology and Applications, Taizhou Institute of Zhejiang University（浙江工业大学储能技术与应用浙江省重点实验室台州研究院）；Institute of Fundamental and Transdisciplinary Research, Zhejiang University（浙江大学基础与交叉科学研究院）；School of Engineering, Hangzhou City University（杭州城市学院工学院）；College of Materials Science and Engineering, Zhejiang University of Technology（浙江工业大学材料科学与工程学院）
Current-induced spin polarization in isotropic k-cubed Rashba model: Theoretical study for p-doped semiconductor heterostructures and perovskite oxides interfaces
Universidad Politécnica de Madrid（马德里理工大学）；Université Côte d'Azur, CNRS, CRHEA（蔚蓝海岸大学，法国国家科学研究中心，高能物理与应用研究中心）；Institute for Quantum Electronics, ETH Zürich（苏黎世联邦理工学院量子电子研究所）；Center for Nanoscience and Nanotechnology, Univ. Paris-Sud, University Paris Saclay（巴黎南大学纳米科学技术中心，巴黎萨克雷大学）
