arXiv 0807.48822008-07-30cond-mat.supr-concond-mat.mtrl-sci

Superconductivity in heavily vacant diamond

M. Alaei, S. Akbar Jafari, H. Akbarzadeh

发表信息：: J. Phys. Chem. Sol. 69 (2008) 3283
DOI：: 10.1016/j.jpcs.2008.06.103

英文摘要：

Using first principle electronic structure calculations we investigated the role of substitutional doping of B,N,P,Al and vacancies (${\cal V}$) in diamond (X$_α$C$_{1-α}$). In the heavy doping regime, at about $\sim 1-6%$ doping an impurity band appears in the mid gap. Increasing further the concentration of the impurity substitution fills in the gap of the diamond host. Our first principle calculation indicates that in the case of vacancies, a clear single-band picture can be employed to write down an effective {\em one band} microscopic Hamiltonian, which can be used to further study various many-body and disorder effects in impurity band (super)conductors.

机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。

阅读原文

阅读 PDF ↗

arXiv 页面 ↗HTML 原文 ↗

本文内容

英文摘要相关论文

机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。

继续探索

相关论文

Signature of high Tc around 25K in higher quality heavily boron-doped diamond

Diamond has outstanding physical properties: the hardest known material, a wide band gap, the highest thermal conductivity, and a very high Debye temperature. In 2004, Ekimov et al. discovered that heavily boron-doped (B-doped) diamond becomes a superconductor around 4 K. Our group successfully controlled the boron concentration and synthesized homoepitaxially grown superconducting diamond films by a CVD method. By CVD method, we found that superconductivity appears when the boron concentration (nB) exceeds a metal-insulator transition concentration of 3.0x10^20 cm^-3 and its Tczero increases …

2014-11-28cond-mat.mtrl-scicond-mat.supr-con

Superconducting and Normal State Properties of Heavily Hole-Doped Diamond

We report measurements of the specific heat, Hall effect, upper critical field and resistivity on bulk, B-doped diamond prepared by reacting amorphous B and graphite under high-pressure/high-temperature conditions. These experiments establish unambiguous evidence for bulk superconductivity and provide a consistent set of materials parameters that favor a conventional, weak coupling electron-phonon interpretation of the superconducting mechanism at high hole doping.

2004-09-23cond-mat.supr-con

Advantage on Superconductivity of Heavily Boron-Doped (111) Diamond Films

The superconductivity transition temperatures Tc(onset) of 11.4 K and Tc(offset) of 7.4 K, which are the highest in diamond at present, are realized on homoepitaxially grown (111) diamond films with a high boron doping concentration of 8.4E21 cm-3 (4.7 atomic percent). Tc values of (111) diamond films are more than twice as high as those of (100) films at the equivalent boron concentration. The Tc of boron-doped (111) diamond increases as the boron content increases up to the maximum incorporated concentration and is agrees with the value estimated using McMillan's equation. The advantageous T…

2005-03-12cond-mat.supr-con

重掺杂块状单晶金刚石与石墨烯/金刚石异质结构中的超导性和金属行为

Superconductivity and metallic behavior in heavily doped bulk single crystal diamond and graphene/diamond heterostructure

该研究通过硼氮共掺杂制备高载流子浓度单晶超导金刚石，并揭示迁移率调控下的超导—金属转变，还利用石墨烯/金刚石异质结构使单层石墨烯超导。

2024-03-01cond-mat.supr-conphysics.app-ph

Irradiation induced modification of the superconducting properties of heavily boron doped diamond

Diamond, a wide band-gap semiconductor, can be engineered to exhibit superconductivity when doped heavily with boron. The phenomena has been demonstrated in samples grown by chemical vapour deposition where the boron concentration exceeds the critical concentration for the metal-to-insulator transition of $n_{MIT} \gtrsim 4\times10^{20}/\text{cm}^3$. While the threshold carrier concentration for superconductivity is generally well established in the literature, it is unclear how well correlated higher critical temperatures are with increased boron concentration. Previous studies have generally…

2018-09-06cond-mat.supr-con

Low-energy electrodynamics of superconducting diamond

Heavily-boron-doped diamond films become superconducting with critical temperatures $T_c$ well above 4 K. Here we first measure the reflectivity of such a film down to 5 cm$^{-1}$, by also using Coherent Synchrotron Radiation. We thus determine the optical gap, the field penetration depth, the range of action of the Ferrell-Glover-Tinkham sum rule, and the electron-phonon spectral function. We conclude that diamond behaves as a dirty BCS superconductor.

2006-02-06cond-mat.supr-con

更多相关论文收起更多论文

Superconductivity in Polycrystalline Diamond Thin Films

Superconductivity was discovered in heavily boron-doped diamond thin films deposited by the microwave plasma assisted chemical vapor deposition (MPCVD) method. Advantages of the MPCVD deposited diamond are the controllability of boron concentration in a wide range, and a high boron concentration, especially in (111) oriented films, compared to that of the high-pressure high-temperature method. The superconducting transition temperatures are determined to be 8.7K for Tc onset and 5.0K for zero resistance by transport measurements. And the upper critical field is estimated to be around 7T.

2005-09-18cond-mat.supr-con

Electric field exfoliation and high-T$_{\text{C}}$ superconductivity in field-effect hole-doped hydrogenated diamond (111)

We investigate the possible occurrence of field-effect induced superconductivity in the hydrogenated $(111)$ diamond surface by first-principles calculations. By computing the band alignment between bulk diamond and the hydrogenated surface we show that the electric field exfoliates the sample, separating the electronic states at the valence band top from the bulk projected ones. At the hole doping values considered here, ranging from $n=2.84\times10^{13}$cm$^{-2}$ to $n=6\times 10^{14} $ cm$^{-2}$, the valence band top is composed of up to three electronic bands hosting holes with different e…

2019-08-05cond-mat.mtrl-scicond-mat.supr-con

Superconductivity in CVD Diamond Thin Film Well-Above Liquid Helium Temperature

Diamond has always been adored as a jewel. Even more fascinating is its outstanding physical properties; it is the hardest material known in the world with the highest thermal conductivity. Meanwhile, when we turn to its electrical properties, diamond is a rather featureless electrical insulator. However, with boron doping, it becomes a p-type semiconductor, with boron acting as a charge acceptor. Therefore the recent news of superconductivity in heavily boron-doped diamond synthesized by high pressure sintering was received with considerable surprise. Opening up new possibilities for diamond-…

2004-06-04cond-mat.supr-con

Superconductivity in heavily boron-doped silicon carbide

The discoveries of superconductivity in heavily boron-doped diamond (C:B) in 2004 and silicon (Si:B) in 2006 renew the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily-boron doped silicon carbide (SiC:B). The sample used for that study consists of cubic and hexagonal SiC phase fractions and hence this lead to the question which of them participates in the superconductivity. …

2008-10-01cond-mat.supr-con

Superconductivity of hexagonal heavily-boron doped silicon carbide

In 2004 the discovery of superconductivity in heavily boron-doped diamond (C:B) led to an increasing interest in the superconducting phases of wide-gap semiconductors. Subsequently superconductivity was found in heavily boron-doped cubic silicon (Si:B) and recently in the stochiometric ''mixture'' of heavily boron-doped silicon carbide (SiC:B). The latter system surprisingly exhibits type-I superconductivity in contrast to the type-II superconductors C:B and Si:B. Here we will focus on the specific heat of two different superconducting samples of boron-doped SiC. One of them contains cubic and…

2008-08-02cond-mat.supr-con

Effects of Rashba-spin-orbit coupling on superconducting boron-doped nanocrystalline diamond films: evidence of interfacial triplet superconductivity

Among the many remarkable properties of diamond, the ability to superconduct when heavily doped with boron has attracted much interest in the carbon community. When considering the nanocrystalline boron doped system, the reduced dimensionality and confinement effects have led to several intriguing observations most notably, signatures of a mixed superconducting phase. Here we present ultra-high-resolution transmission electron microscopy imaging of the grain boundary and demonstrate how the complex microstructure leads to enhanced carrier correlations. We observe hallmark features of spin-orbi…

2020-09-01cond-mat.supr-con

Non-s wave superconductivity in boron-doped nanodiamond films with 0-π Josephson junction array

Superconducting transport properties of granular materials are greatly influenced by the microstructure. We show that in heavily boron-doped diamond films (HBDDF) films some sharp transport features can be manipulated by applying a magnetic field and controlled finite bias current. We demonstrate the conductivity cross-over from dirty metal to the superconducting state through an insulating peak arising at a very low current or magnetic field region and particularly pronounced negative magnetoresistance with periodic oscillatory features. The current-voltage characteristics show features of th…

2017-10-14cond-mat.supr-con

Localization and Superconductivity in Doped Semiconductors

Motivated by the discovery of superconductivity in boron-doped (B-doped) diamond, we investigate the localization and superconductivity in heavily doped semiconductors. The competition between Anderson localization and s-wave superconductivity is investigated from the microscopic point of view. The effect of microscopic inhomogeneity and the thermal fluctuation in superconductivity are taken into account using the self-consistent 1-loop-order theory with respect to superconducting fluctuation. The crossover from superconductivity in the host band to that in the impurity band is described on th…

2009-01-26cond-mat.dis-nncond-mat.supr-con

Specific heat and electronic states of superconducting boron-doped silicon carbide

The discoveries of superconductivity in the heavily-boron doped semiconductors diamond (C:B) in 2004 and silicon (Si:B) in 2006 have renewed the interest in the physics of the superconducting state of doped semiconductors. Recently, we discovered superconductivity in the closely related ''mixed'' system heavily boron-doped silcon carbide (SiC:B). Interestingly, the latter compound is a type-I superconductor whereas the two aforementioned materials are type-II. In this paper we present an extensive analysis of our recent specific-heat study, as well as the band structure and expected Fermi surf…

2008-03-07cond-mat.supr-con