We propose a method of constructing cold atom analogs of the spintronic device known as the Datta-Das transistor (DDT), which despite its seminal conceptual role in spintronics, has never been successfully realized with electrons. We propose two alternative schemes for an atomic DDT, both of which are based on the experimental setup for tripod stimulated Raman adiabatic passage. Both setups involve atomic beams incident on a series of laser fields mimicking the relativistic spin orbit coupling for electrons that is the operating mechanism of the DDT.
In this review, we present an overview of four proof-of-concept of single-atom transistors based on four technologies : Atom doping, Single electron transistors, Single-atom metallic wire and Multilevel atomic-scale switching. Techniques and methods to build these transistors are described as such as the theory behind their mechanisms.
We show that the stray field generated by isolated magnetic skyrmions can be used to trap ultracold atoms. Specially, ring-shaped and double-well trapping potentials for ultracold atoms can be created by combining the field from two isolated skyrmions. The geometry size, potential barrier, trapping frequency and Majorana loss rate of these magnetic traps can be tuned by the external magnetic field or device configuration. The results here could be useful to develop atomtronics devices by manipulating the magnetic skyrmions with modern spintronics techniques.
We show how impurity atoms can measure moments of ultracold atomic gas densities, using the example of bosons in a one-dimensional lattice. This builds on a body of work regarding the probing of systems by measuring the dephasing of an immersed qubit. We show this dephasing is captured by a function resembling characteristic functions of probability theory, of which the derivatives at short times reveal moments of the system operator to which the qubit couples. For a qubit formed by an impurity atom, in a system of ultracold atoms, this operator can be the density of the system at the location…
Spin-dependent electrical injection has found useful applications in storage devices, but fully operational spin-dependent semiconductor electronics remain a challenging task because of weak spin-orbit couplings and/or strong spin relaxations. These limitations are lifted considering atoms instead of electrons or holes as spin carriers. In this emerging field of atomtronics, we demonstrate the equivalent of a Datta-Das transistor using a degenerate Fermi gas of strontium atoms as spin carriers in interaction with a tripod laser-beams scheme. We explore the dependence of spin rotation, and we i…
We discuss the possibility to create hybrid quantum systems that combine ultracold atoms with graphene membranes. We investigate a setup in which a cold atom cloud is placed close to a free-standing sheet of graphene at distances on the order of a few hundred nanometers. The atoms then couple to the graphene membrane via Casimir-Polder forces. Temporal changes in the atomic state of the atomic cloud changes the Casimir-Polder interaction, thereby leading to the creation of a backaction force in the graphene sheet. This setup provides a controllable way to engineer ripples in a graphene sheet.
Transistors, regardless of their size, rely on electrical gates to control the conductance between source and drain contacts. In atomic-scale transistors, this conductance is exquisitely sensitive to single electrons hopping via individual orbitals. Single-electron transport in molecular transistors has been previously studied using top-down approaches to gating, such as lithography and break junctions. But atomically precise control of the gate - which is crucial to transistor action at the smallest size scales - is not possible with these approaches. Here, we used individual charged atoms, m…
The controlled fabrication of actively switchable atomic-scale devices, in particular transistors, has remained elusive to date. Here we explain operation of an atomic-scale three-terminal device by a novel switching mechanism of bistable, self-stabilizing reconstruction of the electrode contacts at the atomic level: While the device is manufactured by electrochemical deposition, it operates entirely on the basis of mechanical effects of the solid-liquid interface. We analyze mechanically and thermally stable metallic junctions with a predefined quantized conductance of 1-5 G_0 in experiment a…
The dynamics of two traps with ultracold atoms and connected by Josephson type coupling, is shown to exhibit a transition from dispersive dynamics to localized coherent oscillations. This transition is controlled by coupling strength and energy offset between the traps. The dynamics is also shown to be exactly that of a Heisenberg chain with a linear magnetic field. Possible applications for ``quantum-state engineering'' are discussed.
We show that the magnetic field produced by a chiral ferromagnetic film can be applied to control ultracold atoms. The film will act as a magnetic mirror or a reflection grating for ultracold atoms when it is in the helical phase or the skyrmion crystal phase respectively. By applying a bias magnetic field and a time-dependent magnetic field, one-dimensional or two-dimensional magnetic lattices including honeycomb, Kagome, triangular types can be created to trap the ultracold atoms. We have also discussed the trapping height, potential barrier, trapping frequency, and Majorana loss rate for ea…
We show that current in a two-dimensional electron gas (2DEG) can trap ultracold atoms $<1 μ$m away with orders of magnitude less spatial noise than a metal trapping wire. This enables the creation of hybrid systems, which integrate ultracold atoms with quantum electronic devices to give extreme sensitivity and control: for example, activating a single quantized conductance channel in the 2DEG can split a Bose-Einstein condensate (BEC) for atom interferometry. In turn, the BEC offers unique structural and functional imaging of quantum devices and transport in heterostructures and graphene.
In the present work, we have investigated the quantum transport in n Si junction less nanowire field effect transistors using 3 D, full band atomistic sp3d5s spin orbital coupled tight binding method. We have investigated the IDS VGS transfer characteristics, IDS VDS output characteristics, ON current, OFF current leakage, subthreshold swing and energy position resolved electron density spectrum Gn x, E in n Si junction less nanowire field effect transistors. We also study IDS VGS transfer characteristics with variation of High K gate materials. Quantum mechanical simulation is performed on th…
We report dual-gate modulation of topological insulator field-effect transistors (TI FETs) made on Bi2Te3 thin flakes with integration of atomic-layer-deposited (ALD) Al2O3 high-k dielectric. Atomic force microscopy study shows that ALD Al2O3 is uniformly grown on this layer-structured channel material. Electrical characterization reveals that the right selection of ALD precursors and the related surface chemistry play a critical role in device performance of Bi2Te3 based TI FETs. We realize both top-gate and bottom-gate control on these devices, and the highest modulation rate of 76.1% is ach…
We propose a way of generating optical lattices embedded in photonic crystals. By setting up extended modes in photonic crystals, ultracold atoms can be mounted in different types of field intensity distributions. This novel way of constructing optical lattices can be used to produce more elaborate periodic potentials by manufacturing appropriate geometries of photonic crystals. We exemplify this with a square lattice and comment on the possibility of using geometries with defects.
The ability to apply GHz frequencies to control the quantum state of a single $P$ atom is an essential requirement for the fast gate pulsing needed for qubit control in donor based silicon quantum computation. Here we demonstrate this with nanosecond accuracy in an all epitaxial single atom transistor by applying excitation signals at frequencies up to $\approx$ 13 GHz to heavily phosphorous doped silicon leads. These measurements allow the differentiation between the excited states of the single atom and the density of states in the one dimensional leads. Our pulse spectroscopy experiments co…
In this work, we demonstrate enhancement-mode field-effect transistors by atomic-layer-deposited (ALD) amorphous In2O3 channel with thickness down to 0.7 nm. Thickness is found to be critical on the materials and electron transport of In2O3. Controllable thickness of In2O3 at atomic scale enables the design of sufficient 2D carrier density in the In2O3 channel integrated with the conventional dielectric. The threshold voltage and channel carrier density are found to be considerably tuned by channel thickness. Such phenomenon is understood by the trap neutral level (TNL) model where the Fermi-l…
Three-dimensional topological gapless matters with gapless degeneracies protected by a topological invariant defined over a closed manifold in momentum space have attracted considerable interest in various fields ranging from condensed matter materials to ultracold atomic gases. As a highly controllable and disorder free system, ultracold atomic gases provide a versatile platform to simulate topological gapless matters. Here, the current progress in studies of topological gapless phenomena in three-dimensional cold atom systems is summarized in the review. It is mainly focused on Weyl points, …
Transient currents in atomically thin MoTe$_2$ field-effect transistor are measured during cycles of pulses through the gate electrode. The transients are analyzed in light of a newly proposed model for charge trapping dynamics that renders a time-dependent change in threshold voltage the dominant effect on the channel hysteretic behavior over emission currents from the charge traps. The proposed model is expected to be instrumental in understanding the fundamental physics that governs the performance of atomically thin FETs and is applicable to the entire class of atomically thin-based device…
We present a design for simulating quantum pumping of electrons in a mesoscopic circuit with ultra-cold atoms in a micro-magnetic chip trap. We calculate theoretical results for quantum pumping of both bosons and fermions, identifying differences and common features, including geometric behavior and resonance transmission. We analyze the feasibility of experiments with bosonic $^{87}$Rb and fermionic $^{40}$K atoms with an emphasis on reliable atomic current measurements.
In order to continue to improve integrated circuit performance and functionality, scaled transistors with short channel lengths and low thickness are needed. But the further scaling of silicon-based devices and the development of alternative semiconductor channel materials that are compatible with current fabrication processes is challenging. Here we report atomic-layer-deposited indium oxide transistors with channel lengths down to 8 nm, channel thicknesses down to 0.5 nm and equivalent dielectric oxide thickness down to 0.84 nm. Due to the scaled device dimensions and low contact resistance,…
In this work, we demonstrate scaled back-end-of-line (BEOL) compatible indium oxide (In2O3) transistors by atomic layer deposition (ALD) with channel thickness (Tch) of 1.0-1.5 nm, channel length (Lch) down to 40 nm, and equivalent oxide thickness (EOT) of 2.1 nm, with record high drain current of 2.0 A/mm at VDS of 0.7 V among all oxide semiconductors. Enhancement-mode In2O3 transistors with ID over 1.0 A/mm at VDS of 1 V are also achieved by controlling the channel thickness down to 1.0 nm at atomic layer scale. Such high current density in a relatively low mobility amorphous oxide semicondu…
