We have investigated theoretically the conductance of a Normal-Superconductor point-contact in the tunnel limit and analyzed the quantum interference effects originating from the scattering of quasiparticles by point-like defects. Analytical expressions for the oscillatory dependence of the conductance on the position of the defect are obtained for the defect situated either in the normal metal, or in the superconductor. It is found that the amplitude of oscillations significantly increases when the applied bias approaches the gap energy of the superconductor. The spatial distribution of the order parameter near the surface in the presence of a defect is also obtained.
By using bosonization method and unitary transformation, we give a general relation between the dimensionless tunneling conductance and the fractional Coulomb blockade conductance peak splitting which is valid both for weak and strong transmission between two quantum dots, and show that the tunneling conductance has a linear temperature dependence in the low energy and low temperature limit.
We study the linear conductance of single electron devices showing Coulomb blockade phenomena. Our approach is based on a formally exact path integral representation describing electron tunneling nonperturbatively. The electromagnetic environment of the device is treated in terms of the Caldeira-Leggett model. We obtain the linear conductance from the Kubo formula leading to a formally exact expression which is evaluated in the semiclassical limit. Specifically we consider three models. First, the influence of an electromagnetic environment of arbitrary impedance on a single tunnel junction is…
The point contact tunneling conductance between edges of the spin singlet $ν=2/3,\hat{K}=(3/3/0)$ quantum Hall states is studied both in the quasiparticle tunneling picture and in the electron tunneling picture. Due to the interplay of Zeeman splitting and the long range Coulomb interaction between edges of opposite chirality novel spin excitations emerge, and their effect is characterized by anomalous exponents of the charge and spin tunneling conductances in various temperature ranges. Depending on the kinds of scatterings at the point contact and the tunneling mechanism the anomalous intera…
We theoretically investigate the transport properties of a normal-insulator-superconductor (NIS) junction of silicene in the thin barrier limit. Similar to graphene the tunneling conductance in such NIS structure exhibits an oscillatory behavior as a function of the strength of the barrier in the insulating region. However, unlike in graphene, the tunneling conductance in silicene can be controlled by an external electric field owing to its buckled structure. We also demonstrate the change in behavior of the tunneling conductance across the NIS junction as we change the chemical potential in t…
We theoretically studied the in-plane tunneling spectroscopy of the hybrid structure composed of a metal and a semiconductor with Rashba spin-orbit coupling. We found that the energy spacing between two distinct features in the conductance spectrum can be used to measure the Rashba energy of the semiconductor. We also considered the effect that varying the probability of spin-conserving and spin-flip scattering at the interface has on the overall conductance. Surprisingly, an increase in interface scattering probability can actually result in increased conductance under certain conditions. Par…
We study the electronic transport in a graphene-based superconductor-normal(graphene)-superconductor (SNS) junction by use of the Dirac-Bogoliubov-de Gennes equation. We consider the properties of tunneling conductance through an undoped strip of graphene with heavily doped superconducting electrodes in the dirty limit. We find that spectrum of Andreev bound states are modified in the presence of single localized defect in the bulk. The minimum tunneling conductance remains the same and this result doesn't depend on the actual location of the imperfection.
Using scanning tunneling microscopy (STM), we investigated the evolution of electrical conductance between a Pb tip and Pb(111) surface from tunneling to atomic point contact at a site that was defined with atomic precision. We found that the conductance evolution depended on the contact site, for instance, on-top, bridge, or hollow (hcp and fcc) sites in the Pb lattice. In the transition from tunneling to contact regimes, the conductance measured at the on-top site was enhanced. In the point contact regime, the hollow sites had conductances larger than those of the other sites, and between th…
Employing an ab initio Screened Korringa-Kohn-Rostoker (SKKR) band structure method for a metal-vacuum-metal junction, we find that the tunnel conductance is different when it is calculated across the barrier and far from it. We attribute this difference to an artefact of the ballistic approach which overestimates the role of specular reflections, and its inability to pick up contributions from localized interface states. To reconcile the ballistic approach with experiment, we propose that the tunnel conductance should be calculated as if it is measured directly across the barrier. In this cas…
Even a single point defect in a quantum wire causes a conductance reduction. In this paper we prove (without any approximations) that for any point impurity this conductance reduction in all the sub-bands is exactly 2e^2/h. Moreover, it is shown that in the case of a surface defect, not only is the conductance minimum independent of the defect characteristics, but the transmission matrix also converges to universal (defect-independent) values. We also discuss particle confinement between two arbitrarily weak point defects.
We study the temperature and gate voltage dependence of the conductance of the single electron transistor focusing on highly conducting devices. Electron tunneling is treated nonperturbatively by means of path integral Monte Carlo techniques and the conductance is determined from the Kubo formula. A regularized singular value decomposition scheme is employed to calculate the conductance from imaginary time simulation data. Our findings are shown to bridge between available analytical results in the semiclassical and perturbative limits and are found to explain recent experimental results in a …
The conductance fluctuations of a metallic wire which is interrupted by a small tunnel junction has been explored experimentally. In this system, the bias voltage V, which drops almost completely inside the tunnel barrier, is used to probe the energy dependence of conductance fluctuations due to disorder in the wire. We find that the variance of the fluctuations is directly proportional to V. The experimental data are consistently described by a theoretical model with two phenomenological parameters: the phase breaking time at low temperatures and the diffusion coefficient.
In paper [1] (Avotina et al. Phys. Rev. B,74, 085411 (2006)) the effect of Fermi surface anisotropy to the conductance of a tunnel point contact, in the vicinity of which a single point-like defect is situated, has been investigated theoretically. The oscillatory dependence of the conductance on the distance between the contact and the defect has been found for a general Fermi surface geometry. In this paper we apply the method developed in [1] to the calculation of the conductance of noble metal contacts. An original algorithm, which enables the computation of the conductance for any parametr…
Spin-dependent transport through two coupled single-level quantum dots weakly connected to ferromagnetic leads with collinear magnetizations is considered theoretically. Transport characteristics, including the current, linear and nonlinear conductance, and tunnel magnetoresistance are calculated using the real-time diagrammatic technique in the parallel, serial, and intermediate geometries. The effects due to virtual tunneling processes between the two dots via the leads, associated with off-diagonal coupling matrix elements, are also considered. Negative differential conductance and negative…
The influence of the interference of electron waves, which are scattered by single impurities and by a barrier on nonlinear conductance and shot noise of metallic microconstriction is studied theoretically. It is shown that the these characteristics are nonmonotonic functions on the applied bias.
Majorana zero modes can appear at the wire ends of a 1D topological superconductor and manifest themselves as a quantized zero-bias conductance peak in the tunneling spectroscopy of normal-superconductor junctions. However, in superconductor-semiconductor hybrid nanowires, zero-bias conductance peaks may arise owing to topologically trivial mechanisms as well, mimicking the Majorana-induced topological peak in many aspects. In this work, we systematically investigate the characteristics of zero-bias conductance peaks for topological Majorana bound states, trivial quasi-Majorana bound states an…
The influence of a quantizing magnetic field $H$ to the conductance of a tunnel point contact in the presence of the single defect has been considered. We demonstrate that the conductance exhibits specific magneto-quantum oscillations, the amplitude and period of which depend on the distance between the contact and the defect. We show that a non-monotonic dependence of the point-contact conductance results from a superposition of two types of oscillations: A short period oscillation arising from electron focusing by the field $H$ and a long period oscillation of Aharonov-Bohm-type originated f…
Spin-dependent electronic transport in magnetic double-island devices is considered theoretically in the sequential tunneling regime. Electric current and tunnel magnetoresistance are analyzed as a function of the bias voltage and spin relaxation time in the islands. It is shown that the interplay of spin accumulation on the islands and charging effects leads to periodic modification of the differential conductance and tunnel magnetoresistance. For a sufficiently long spin relaxation time, the modulations are associated with periodic oscillations of the sign of both the tunnel magnetoresistanc…
We present measurements of transport through two tunnel-coupled quantum dots of different sizes connected in series in a strong, variable, perpendicular magnetic field. Double dot conductance was measured both as a function of magnetic field, which was varied across the filling factor nu = 4 quantum Hall plateau, and as a function of charge induced evenly on the two dots. The conductance peaks undergo position shifts and height modulations as the magnetic field is varied. These shifts and modulations form a pattern that repeats over large ranges of magnetic field and with the addition of doubl…
Motivated by recent experiments that report the almost-generic large-conductance peaks without very extensive fine-tuning, we propose an alternative mechanism through direct theoretical simulations that can explain the large zero-bias conductance peaks being generated on-demand in the nontopological regime in Majorana nanowires by satisfying the following three sufficient conditions: (i) strong potential disorder in the bulk of the nanowire, suppressing the topological regime; (ii) strong suppression of the disorder near the nanowire ends connecting to the tunneling leads, perhaps because of s…
We theoretically study a tunneling effect in a two-dimensional Dirac semimetal with two Dirac points protected by non-symmorphic symmetries. The tunnel barrier can be arranged by a magnetic exchange potential which opens a gap at the Dirac points which can be induced by a magnetic proximity effect of a ferromagnetic insulator. We found that the tunnel decay length increases with a decrease in the strength of the spin-orbit coupling, and moreover the dependence is attributed to the correlation of sublattice and spin degree of freedoms which lead to symmetry-protected Dirac points. The tunnel pr…
In a previous paper (Avotina et al.,Phys. Rev. B Vol.71, 115430 (2005)) we have shown that in principle it is possible to image the defect positions below a metal surface by means of a scanning tunnelling microscope. The principle relies on the interference of electron waves scattered on the defects, which give rise to small but measurable conductance fluctuations. Whereas in that work the band structure was assumed to be free-electron like, here we investigate the effects of Fermi surface anisotropy. We demonstrate that the amplitude and period of the conductance oscillations are determined b…
In this review we present recent theoretical results concerning investigations of single subsurface defects by means of a scanning tunneling microscope (STM). These investigations are based on the effect of quantum interference between the electron partial waves that are directly transmitted through the contact and the partial waves scattered by the defect. In particular, we have shown the possibility imaging the defect position below a metal surface by means of STM. Different types of subsurface defects have been discussed: point-like magnetic and non-magnetic defects, magnetic clusters in a …
The quantum conductance of the single-electron tunneling (SET) transistor is investigated in this paper by the functional integral approach. The formalism is valid for arbitrary tunnel resistance of the junctions forming the SET transistor at any temperature. The path integrals are evaluated by the semiclassical method to yield an explicit non-perturbation form of the quantum conductance of the SET transistor. An anomaly of the quantum conductance is found if the tunnel resistances are much smaller than the quantum resistance. The dependence of the conductance on the gate voltage is also discu…
The evolution of electron conductance in the presence of inelastic effects is studied as an atomic gold contact is formed evolving from a low-conductance regime (tunneling) to a high-conductance regime (contact). In order to characterize each regime, we perform density functional theory (DFT) calculations to study the geometric and electronic structures, together with the strength of the atomic bonds and the associated vibrational frequencies. The conductance is calculated by first evaluating the transmission of electrons through the system, and secondly by calculating the conductance change d…
We study influence of image forces on conductance of ferroelectric tunnel junctions. We show that the influence of image forces is twofold: i) they enhance the electro-resistance effect due to polarization hysteresis in symmetric tunnel junctions at non-zero bias and ii) they produce the electro-resistance effect due to hysteresis of dielectric permittivity of ferroelectric barrier. We study dependence of ferroelectric tunnel junction conductance on temperature and show that image forces lead to strong conductance variation with temperature.
We study backscattering of electrons and conductance suppression in a helical edge channel in two-dimensional topological insulators with broken axial spin symmetry in the presence of nonmagnetic point defects that create bound states. In this system the tunneling coupling of the edge and bound states results in the formation of composite helical edge states in which all four partners of both Kramers pairs of the conventional helical edge states and bound states are mixed. The backscattering is considered as a result of inelastic two-particle scattering of electrons, which are in these composi…
Temporal universal conductance fluctuations (TUCF) are observed in RuO$_2$ nanowires at cryogenic temperatures. The fluctuations persist up to very high $T \sim 10$ K. Their root-mean-square magnitudes increase with decreasing $T$, reaching $\sim 0.2 e^2/h$ at $T \lesssim 2$ K. These fluctuations are shown to originate from scattering of conduction electrons with rich amounts of mobile defects in artificially synthesized metal oxide nanowires. TUCF characteristics in both one-dimensional saturated and unsaturated regimes are identified and explained in terms of current theories. Furthermore, t…
We have investigated the quantum admittance of an ultrasmall tunnel junction with arbitrary tunneling strength under an electromagnetic environment. Using the functional integral approach a close analytical expression of the quantum admittance is derived for a general electromagnetic environment. We then consider a specific controllable environment where a resistance is connected in series with the tunneling junction, for which we derived the dc quantum conductance from the zero frequency limit of the imaginary part of the quantum admittance. For such electromagnetic environment the dc conduct…
The current-voltage ($IV$) characteristics beyond the linear response regime of magnetic tunnel junction (MTJ) is systematically investigated. We find a clear negative correlation between the two coefficients to characterize the linear ($I$$\propto$$V$) and the lowest-order nonlinear ($I$$\propto$$V^3$) currents, which holds regardless of the temperature and the thickness of the tunnel barrier. This observation cannot simply be explained by the standard tunneling model such as the Brinkman model, suggesting a mechanism intrinsic to MTJ. We propose a phenomenological model based on the Julliére…
The interaction and tunneling conductance between oppositely located ends of coaxial carbon nanotubes are studied by the example of two (11,11) nanotubes with open ends terminated by hydrogen atoms. The Green function formalism is applied to determine the tunneling current through the nanotube ends as a function of the distance between the ends, relative orientation of the nanotubes and voltage applied. The energy favorable configuration of the coaxial nanotubes is obtained by the analysis of their interaction energy at different distances between the nanotube ends and angles of their relative…
We investigate theoretically the electronic transport properties in narrow graphene ribbons with an adatom-induced defect. It is found that the lowest conductance step of a metallic graphene nanoribbon may develop a dip even down to zero at certain values of the Fermi energy due to the defect. Accompanying the occurrence of the conductance dip, a loop current develops around the defect. We show how the properties of the conductance dip depend on the parameters of the defect, such as the relative position and severity of the defect as well as the width and edges of the graphene ribbons. In part…
We investigate the combined influence of structural defects and uniaxial longitudinal strain on the electronic transport properties of armchair graphene nanoribbons using the numerical approach based on the semiempirical tight-binding model, the Landauer formalism, and the recursion method for Green functions. We calculate the conductance of graphene nanoribbons in the quantum coherent regime with different types and concentrations of defects. Further, we apply uniform planar tension to the nonideal graphene ribbons with randomly distributed and oriented single and double vacancies and Stone-W…
The electronic and transport properties of graphene modulated by magnetic barrier arrays are derived for finite temperature. Prominent conductance gaps, originating from quantum interference effects are found in the periodic array case. When a structural defect is inserted in the array, sharp defect modes of high conductance appear within the conductance gaps. These modes can be shifted by local doping in the defect region resulting into sensing of the chemical molecules that adhere on the graphene sheet. In general it is found that sensitivity is strongly dependent on temperature due to smoot…
The linear conductance of the a small metallic tunnel junction embedded in an electromagnetic environment of arbitrary impedance is determined in the semiclassical limit. Electron tunneling is treated beyond the orthodox theory of Coulomb blockade phenomena by means of a nonperturbative path integral approach. The frequency dependent conductance is obtained from Kubo's formula. The theoretical predictions are valid for high temperatures and/or for large tunneling conductance and are found to explain recent experimental data.
A one-dimensional semiconductor nanowire proximitized by a nearby superconductor may become a topological superconductor hosting localized Majorana zero modes at the two wire ends in the presence of spin-orbit coupling and Zeeman spin splitting (arising from an external magnetic field). The hallmark of the presence of such Majorana zero modes is the appearance of a zero-temperature quantized zero-bias conductance peak in the tunneling spectroscopy of the Majorana nanowire. We theoretically study the temperature and the tunnel coupling dependence of the tunneling conductance in such nanowires t…
We study the nonequilibrium transport through a quantum dot coupled to normal and superconducting leads. We use the modified second-order perturbation theory to calculate the differential conductance and the local density of states at the quantum dot. In the strong but finite Coulomb interaction regime, the differential conductance shows an anomalous peak not at a zero bias voltage but at a finite bias voltage. We also observe an additional Kondo resonance besides the normal one in the local density of states, where the former is caused by nonequilibrium Andreev tunneling via the normal Kondo …
We investigate charge conductance and spin and valley polarization along with the tunnelling magneto-resistance (TMR) in silicene junctions composed of normal silicene and ferromagnetic silicene. We show distinct features of the conductances for parallel and anti-parallel spin configurations and the TMR, as the ferromagnetic-normal-ferromagnetic (FNF) junction is tuned by an external electric field. We analyse the behavior of the charge conductance and valley and spin polarizations in terms of the independent conductances of the different spins at the two valleys and the band structure of ferr…
We apply the mechanically controllable break junctions technique to investigate the transition from tunneling to direct contact in tungsten. This transition is quite different from that of other metals and is determined by the local electronic properties of the tungsten surface and the relief of the electrodes at the point of their closest proximity. The conductance traces show a rich variety of patterns from the avalanche-like jump to a mesoscopic contact to the completely smooth transition between direct contact and tunneling. Due to the occasional absence of an adhesive jump the conductance…
We present transport measurements in superconductor-nanowire devices with a gated constriction forming a quantum point contact. Zero-bias features in tunneling spectroscopy appear at finite magnetic fields, and oscillate in amplitude and split away from zero bias as a function of magnetic field and gate voltage. A crossover in magnetoconductance is observed: Magnetic fields above ~ 0.5 T enhance conductance in the low-conductance (tunneling) regime but suppress conductance in the high-conductance (multichannel) regime. We consider these results in the context of Majorana zero modes as well as …
Low-temperature scanning tunneling microscopy and spectroscopy are employed to investigate electron tunneling from a C60-terminated tip into a Cu(111) surface. Tunneling between a C60 orbital and the Shockley surface states of copper is shown to produce negative differential conductance (NDC) contrary to conventional expectations. NDC can be tuned through barrier thickness or C60 orientation up to complete extinction. The orientation dependence of NDC is a result of a symmetry matching between the molecular tip and the surface states.
Properties of one-dimensional (1D) arrays of low Ohmic tunnel junctions (i.e. junctions with resistances comparable to, or less than, the quantum resistance $R_{\rm q}\equiv h/e^2\approx 25.8$ k$Ω$) have been studied experimentally and theoretically. Our experimental data demonstrate that -- in agreement with previous results on single- and double-junction systems -- Coulomb blockade effects survive even in the strong tunneling regime and are still clearly visible for junction resistances as low as 1 k$Ω$. We have developed a quasiclassical theory of electron transport in junction arrays in th…
Double tunneling junctions of ferromagnet-superconductor-ferromagnet electrodes (FSF) show a jump in the conductance when a parallel magnetic field reverses the magnetization of one of the ferromagnetic electrodes. This change is generally attributed to the spin-valve effect or to pair breaking in the superconductor because of spin accumulation. In this paper it is shown that the Meservey-Tedrov effect causes a similar change in the conductance since the magnetic field changes the energy spectrum of the quasi-particles in the superconductor. A reversal of the bias reverses the sign in the cond…
The quantum Hall state at total filling factor $ν_T=1$ in bilayer systems realizes an exciton condensate and exhibits a zero-bias tunneling anomaly, similar to the Josephson effect in the presence of fluctuations. In contrast to conventional Josephson junctions, no Fraunhofer diffraction pattern has been observed, due to disorder induced topological defects, so-called merons. We consider interlayer tunneling in the presence of microwave radiation, and find Shapiro steps in the tunneling current-voltage characteristic despite the presence of merons. Moreover, the Josephson oscillations can also…
The tunneling conductance in the half-metal/conical magnet/superconductor (HM/CM/SC) is investigated by the use of the combined Blonder-Tinkham-Klapwijk (BTK) formalism and the Bogoliubov-de Gennes (BdG) equations. We show that the conductance calculated self-consistently differs significantly from the one calculated in the non-self-consistent framework. The use of the self-consistent procedure ensures that the charge conservation is satisfied. Due to the spin band separation in the HM, the conductance in the subgap region is mainly determined by the anomalous Andreev reflection the probabilit…
Ultrafast photon-assisted tunneling is shown to lead to large nonlinear dynamic currents that can be used to generate dc rectified current as well as higher order harmonic response from a metasurface-coupled tunnel diode. This artificial nonlinear media can have tailored resonances in the infrared around the longitudinal optical phonon modes of various compatible restrahlen oxides leading to enhanced electric field confinement in a metal-oxide-semiconductor tunnel diode. This provides a new avenue for the examination and design of nonlinear phenomena extending the concept of nonlinear suscepti…
We study the relationship between the differential conductance and the local density of states in tight-binding tunnel junctions where the junction' geometry can be varied between the point-contact and the planar-contact limits. The conductances are found to differ significantly in these two limiting cases. We also examine how the matrix element influences the tunneling characteristics and produces contrast in a simple model of scanning tunneling microscope (STM). Some implications regarding the interpretation of STM spectroscopic data in the cuprates are discussed. The calculations are carrie…
We have used the method of generating functional in imaginary time to derive the current-voltage characteristics of a tunnel junction with arbitrary tunneling conductance, connected in series with an external impedance and a voltage source. We have shown that via the renormalized charging energy and the renormalized environment conductance, our nonperturbative expressions of the total action can be mapped onto the corresponding perturbative formulas. This provides a straightforward way to go beyond the perturbation theory. For the impedance being a pure resistance, we have calculated the condu…
We present a first-principles study of the migration and recombination of edge defects (carbon adatom and/or vacancy) and their influence on electrical conductance in zigzag graphene nanoribbons (ZGNRs). It is found that at room temperature, the adatom is quite mobile while the vacancy is almost immobile along the edge of ZGNRs. The recombination of an adatom-vacancy pair leads to a pentagon-heptagon ring defect structure having a lower energy than the perfect edge, implying that such an edge-defect can be formed spontaneously. This edge defect can suppresses the conductance of ZGNRs drastical…
The conductance of metallic graphene nanoribbons (GNRs) with single defects and weak disorder at their edges is investigated in a tight-binding model. We find that a single edge defect will induce quasi-localized states and consequently cause zero-conductance dips. The center energies and breadths of such dips are strongly dependent on the geometry of GNRs. Armchair GNRs are much more sensitive to a vacancy than zigzag GNRs, but are less sensitive to a weak scatter. More importantly, we find that with a weak disorder, zigzag GNRs will change from metallic to semiconducting due to Anderson loca…
Scanning tunneling miscoscopy is one of the most powerful spectroscopic tools for single-electron excitations. We show that the conductance fluctuations, or noise in the conductance, of a tunneling current into an interacting electron system is dominated by density-density and spin-spin correlations. This allows one to probe two-particle properties (susceptibilities) and collective excitations by standard experimental tunneling methods. We demonstrate this theoretically, using a novel many-body calculation for the multi-center Kondo problem, including both direct and indirect exchange between …
We address the measurement of density of states within and beyond the superconducting gap in tunnel-coupled finite-size nanostructures using a capacitive method. Third-harmonic generation is used to yield the full differential conductance spectrum without destruction of the low dimensionality otherwise induced by intimate ohmic coupling to an electrode. The method is particularly relevant to attempts to discern the presence of the fragile Majorana quasiparticle at the end of spin-orbit-coupled nanowires in appropriate magnetic field conditions by their signature mid-gap density of states.
In this work we have analysed the deterimental effect on conductance caused by diffusion of hydrogen atoms in interstitial voids during fabrication process of magnesium oxide barrier of an Fe MgO Fe magnetic tunnel junction, using first principle calculations. This diffusion of hydrogen atoms in interstitial voids in barrier disturbs a certain kind of symmetry possessed by magnesium oxide often termed as delta 1 state symmetry. Distortion in delta 1 state symmetry tempers the condutance through the magnetic tunnel junction specially in parallel configuration, which in turn reduces the Tunnelli…
Understanding of charge transport mechanisms in nanoscale structures is essential for the development of molecular electronic devices. Charge transport through 1D molecular systems connected between two contacts is influenced by several parameters such as the electronic structure of the molecule and the presence of disorder and defects. In this work, we have modeled 1D molecular wires connected between electrodes and systematically investigated the influence of both soliton formation and the presence of defects on properties such as the conductance and the density of states. Our numerical calc…
A longstanding mystery in understanding cuprate superconductors is the inconsistency between the experimental data measured by scanning tunneling spectroscopy (STS) and angle-resolved photoemission spectroscopy (ARPES). In particular, the gap between prominent side peaks observed in STS is much bigger than the superconducting gap observed by ARPES measurements. Here, we reconcile the two experimental techniques by generalising a theory which was previously applied to zero-dimensional mesoscopic Kondo systems to strongly correlated two-dimensional (2D) exotic superconductors. We show that the s…
When a single-layer graphene sheet is contacted with metallic electrodes, tunnel barriers are formed as a result of the doping of graphene by the metal in the contact region. If the Fermi energy level is modulated by a gate voltage, the phenomenon of Klein tunneling results in specific features in the conductance and noise. Here we obtain analytically exact solutions for the transmission and reflection probability amplitudes using a trapezoidal potential barrier, allowing us to calculate the differential conductance and the Fano factor for a graphene sheet in the ballistic regime. We put in ev…
We study point contact tunneling between two leads of a Tomonaga-Luttinger liquid through two degenerate resonant levels in parallel. This is one of the simplest cases of a quantum junction problem where the Fermi statistics of the electrons plays a non-trivial role through the Klein factors appearing in bosonization. Using a mapping to a `generalized Coulomb model' studied in the context of the dissipative Hofstadter model, we find that any asymmetry in the tunneling amplitudes from the two leads grows at low temperatures, so that ultimately there is no conductance across the system. For the …
The tunnel conductance in normal-metal / insulator / PrOs$_4$Sb$_{12}$ junctions is theoretically studied, where skutterudite PrOs$_4$Sb$_{12}$ is considered to be an unconventional superconductor. The conductance are calculated for several pair potentials which have been proposed in recent works. The results show that the conductance is sensitive to the relation between the direction of electric currents and the position of point nodes. We also show that the conductance spectra often deviate from the shape of the bulk density of states and that the sub gap spectra have peak structures in the …
We have investigated the effect of a difference in the tunnelling resistances of the individual normal metal-insulator-superconductor (NIS) tunnel junctions in a double junction SINIS device, with particular emphasis on the impact on the conductance, cooling and thermometric performance. By solving the electrical and thermal equations of the junctions in a self-consistent way, we find that asymmetry gives rise to many new features, such as appearance of an excess sub-gap current, improved cooling performance, exhibition of negative differential resistance, and improved temperature range of the…
