介电弛豫在描述极性液体和固体、绝缘体和半导体中是普遍的，并且理论模型已经发展得很好。然而，在高磁场中，可以揭示和利用先前未知的介电弛豫方面。在这里，我们报告的低温介电弛豫测量轻掺杂硅在高直流磁场B平行和垂直于所施加的交流电场E。对于B//E，我们观察到的温度和磁场依赖的介电色散e（w）的传统德拜弛豫特性，其中的自由载流子浓度是依赖于热掺杂电离，磁冻结，和/或磁定位效应。然而，对于Bperpe，随着磁场的增加，在e（w）中出现异常色散。结果表明，德拜形式可以简单地扩展，通过添加洛伦兹力来描述在交叉磁场和电场中的一般响应的介质。此外，我们预测和观察到一个新的横向介电响应EH perp B perp E以前没有描述的磁介电测量。新的形式主义允许确定的流动性和能力，以区分磁定位/冻结和洛伦兹力的磁介电响应的影响。
英文摘要：
Dielectric relaxation is universal in characterizing polar liquids and solids, insulators, and semiconductors, and the theoretical models are well developed. However, in high magnetic fields, previously unknown aspects of dielectric relaxation can be revealed and exploited. Here, we report low temperature dielectric relaxation measurements in lightly doped silicon in high dc magnetic fields B both parallel and perpendicular to the applied ac electric field E. For B//E, we observe a temperature and magnetic field dependent dielectric dispersion e(w)characteristic of conventional Debye relaxation where the free carrier concentration is dependent on thermal dopant ionization, magnetic freeze-out, and/or magnetic localization effects. However, for BperpE, anomalous dispersion emerges in e(w) with increasing magnetic field. It is shown that the Debye formalism can be simply extended by adding the Lorentz force to describe the general response of a dielectric in crossed magnetic and electric fields. Moreover, we predict and observe a new transverse dielectric response EH perp B perp E not previously described in magneto-dielectric measurements. The new formalism allows the determination of the mobility and the ability to discriminate between magnetic localization/freeze out and Lorentz force effects in the magneto-dielectric response.
Temperature dependent conductivity, dielectric relaxation, electrical modulus and impedance spectroscopy of Ni substituted Na$_{3+2x}$Zr$_{2-x}$Ni$_{x}$Si$_2$PO$_{\rm 12}$
Origin of dielectric relaxation observed in complex perovskite oxides Ba(1-x)La(x)Ti(1-x)Cr(x)O3
在20~300 K温度范围内，精确测量了组成比为0.4 ≤ x ≤ 0.7的复合钙钛矿氧化物Ba（1-x）La（x）Ti（1-x）Cr（x）O3（BLTC）陶瓷的介电常数随频率的变化关系，发现其介电弛豫与CaCu 3 Ti 4 O 12（CCTO）陶瓷十分相似，其在100 K附近表现出类似Debye的频率色散。在BLTC中，铁电相变温度随着x的增加而向低温移动，而在高温区新出现了显著的介电弛豫。介电弛豫可以用一系列两个R-C并联电路的等效模型来解释，这对应于具有内部阻挡层电容器的样品中的异质结构。通过电导率随温度变化和本征介电常数与温度无关的模型，很好地解释了所测介电常数的温度和频率依赖性。研究还发现，在高温区，薄膜对介电弛豫的贡献受样品上直流偏置场的影响。
Structural and Electrical Transport Properties of NASICON type Na$_{3}$Zr$_{2-x}$Ti$_{x}$Si$_2$PO$_{\rm 12}$ ($x=$ 0.1-0.4) Solid Electrolyte Materials
本文研究了Ti掺杂NASICON型Na$_{3}$Zr$_{2-x}$Ti$_{x}$Si$_2$PO$_{\ m 12}$固体电解质，通过结构、阻抗和介电分析揭示其非Debye弛豫特性及室温以上从小极化子隧穿到关联势垒跳跃的传导机制转变，表明其可用于电荷存储器件。
