We present a systematic study on the stability and the structural and electronic properties of mixed molybdenum-niobium disulphides. Using density functional theory we investigate bilateral doping with up to 25 % of MoS2 (NbS2) by Nb (Mo) atoms, focusing on the precise arrangement of dopants within the host lattices. We find that over the whole range of considered concentrations, Nb doping of MoS2 occurs through a substitutional mechanism. For Mo in NbS2 both interstitial and substitutional doping can co-exist, depending upon the particular synthesis conditions. The analysis of the structural and electronic modifications of the perfect bulk systems due to the doping is presented. We show that substitutional Nb atoms introduce electron holes to the MoS2, leading to a semiconductor-metal transition. On the other hand, the Mo doping of Nb2, does not alter the metallic behavior of the initial system. The results of the present study are compared with available experimental data on mixed MoS2-NbS2 (bulk and nanoparticles).
A boost in the development of flexible and wearable electronics facilitates the design of new materials to be applied as transparent conducting films (TCFs). Although single-walled carbon nanotube (SWCNT) films are the most promising candidates for flexible TCFs, they still do not meet optoelectronic requirements demanded their successful industrial integration. In this study, we proposed and thoroughly investigated a new approach that comprises simultaneous bilateral (outer and inner surfaces) SWCNT doping after their opening by thermal treatment at 400 C under an ambient air atmosphere. Dopi…
Despite the lack of reproducible experimental confirmation, group-V elements have been considered as possible sources of p-type doping in ZnO in the form of simple and complex defects. Using ab initio calculations, based on state-of-the-art hybrid exchange-correlation functional, we study a wide range of defects and defect complexes related with N, P, As, and Sb impurities. We show that none of the candidates for p-type doping can be considered a good source of holes in the valence band due to deep acceptor levels and low formation energies of compensating donor defects. In addition, we discus…
Using ab initio methods, we propose a simple and effective way to substitutionally dope graphene sheets with Boron. The method consists of selectively exposing each side of the graphene sheet to different elements. We first expose one side of the membrane to Boron, while the other side is exposed to Nitrogen. Proceeding this way, the B atoms will be spontaneously incorporated into the graphene membrane, without any activation barrier. In a second step, the system should be exposed to a H-rich environment, that will remove the CN radical from the layer and form HCN, leading to a perfect substit…
Efficiency of ZnO doping with Ag and N shallow acceptors, which substitute respectively cations and anions, was investigated. First principles calculations indicate a strong tendency towards formation of nearest neighbor Ag-N pairs and N-Ag-N triangles. Binding of acceptors stems from the formation of quasi-molecular bonds between dopants, and has a universal character in semiconductors. The pairing increases energy levels of impurities, and thus lowers doping efficiency. In the presence of donors, pairing is weaker or even forbidden. However, hydrogen has a tendency to form clusters with Ag a…
We report on \textit{ab initio} electronic structure simulations of Li$_2$O$_2$, where 1.6% of lithium atoms are substituted by silicon. It is demonstrated that this leads to the formation of conducting impurity states in the band gap of Li$_2$O$_2$. We show that these states originate from the antibonding orbitals of the oxygen pairs and are remarkably stable against possible polaron formation (upon electron injection). Through this polaron preemption mechanism, the proposed compound is expected to show significantly higher electronic mobility than stoichiometric Li$_2$O$_2$, which could have…
Mg2NiH4 is a promising hydrogen storage material with fast (de)hydrogenation kinetics. Its hydrogen desorption enthalpy, however, is too large for practical applications. In this paper we study the effects of transition metal doping by first-principles density functional theory calculations. We show that the hydrogen desorption enthalpy can be reduced by ~0.1 eV/H2 if one in eight Ni atoms is replaced by Cu or Fe. Replacing Ni by Co atoms, however, increases the hydrogen desorption enthalpy. We study the thermodynamic stability of the dopants in the hydrogenated and dehydrogenated phases. Dopi…
Using density functional theory based calculations, we have carried out in-depth studies of effect of Co substitution on the magnetic properties of Ni and Pt-based shape memory alloys. We show the systematic variation of the total magnetic moment, as a function of Co doping. A detailed analysis of evolution of Heisenberg exchange coupling parameters as a function of Co doping has been presented here. The strength of RKKY type of exchange interaction is found to decay with the increase of Co doping.
Density functional theory is used to systematically study the electronic and magnetic properties of doped MoS$_2$ monolayers, where the dopants are incorporated both via S/Mo substitution or as adsorbates. Among the possible substitutional dopants at the Mo site, Nb is identified as suitable p-type dopant, while Re is the donor with the lowest activation energy. When dopants are simply adsorbed on a monolayer we find that alkali metals shift the Fermi energy into the MoS$_2$ conduction band, making the system n-type. Finally, the adsorption of charged molecules is considered, mimicking an ioni…
Effect of 3d Transition Metal Doping (Mn, Fe, Co, Ni) on the Electronic and Magnetic Properties of Pd Alloys at Low Impurity Concentrations: An Ab initio Study
Quasi-free standing graphene (QFG) obtained by the intercalation of a hydrogen layer between a SiC surface and the graphene is recognized as an excellent candidate for the development of graphene based technology. In addition, the recent proposal of a direct equivalence between the $p$-type doping typically found for these systems and the spontaneous polarization (SP) associated to the particular SiC polytype, opens the possibility of tuning the number of carriers in the Dirac cones without the need of external gate voltages. However, first principles calculations which could confirm at the at…
Using \textit{ab initio} calculation, we investigate systematically the structural and electronic properties of Ni$_{2}$Nb$_{1+x}$Sn$_{1-x}$ ($x$ = 0, 0.25, 0.50). Here, projector augmented wave approach (PAW) implemented in the Vienna \textit{ab initio} simulation package (VASP) within generalized gradient approximation (GGA) for the exchange-correlation functional has been used. In this article, it is reported that though Ni$_{2}$NbSn and Ni$_{2}$Nb$_{1.25}$Sn$_{0.75}$ have no structural transformation, Ni$_{2}$Nb$_{1.5}$Sn$_{0.5}$ can transform to tetragonal structure from cubic L2$_{1}$ ph…
The way doping affects the spin wave stiffness and the exchange stiffness of permalloy (Py) is investigated via ab-initio calculations, using the Korringa-Kohn-Rostoker (KKR) Green function formalism. By considering various types of dopants of different nature (V, Gd, and Pt), we are able to draw general conclusions. To describe the trends of the stiffness with doping is it sufficient to account for the exchange coupling between nearest neighbors. The polarizability of the impurities is not an important factor for the spin wave stiffness. Rather, the decisive factor is the hybridization betwee…
Chemical adsorption of the species at semiconductor surfaces is analyzed showing the existence of the two contributions to adsorption energy: bond creation and charge transfer. It is shown that the energy of quantum surface states is affected by the electric field at the surface, nevertheless the potential contribution of electron and nuclei cancels out. The charge transfer contribution is Fermi level independent for pinned surfaces. Thus for Fermi level pinned at the surface, the adsorption energy is independent on the Fermi energy i.e. the doping in the bulk. The DFT simulations of adsorptio…
The comparative study of structural, electronic properties, topology of the Fermi surface, and the features of chemical bonding in layered 1111-oxyarsenides LaRhAsO and LaIrAsO has been performed based on the results of ab initio modeling of their electronic structure. It was established that only weak sensitivity with respect both to electron and hole doping is expected for LaIrAsO being non-magnetic metal, however, the Rh-containing compound should be characterized with weak band magnetism, and the hole doping is expected to be able to move its ground state away from the boundary of magnetic…
The electronic properties of doped bilayer graphene in presence of bottom and top gates have been studied and characterized by means of Density Functional Theory calculations. Varying independently the bottom and top gates it is possible to control separately the total doping charge on the sample, and the average external electric field acting on the bilayer. We show that, at fixed doping level, the band gap at the K point in the Brillouin zone depends linearly on the average electric field, whereas the corresponding proportionality coefficient has a non-monotonic dependence on doping. We find…
Potentially superhard $W_{1-x}Zr_xB_2$ polymorph hP6-P6$_3$/mmc-$WB_2$ with zirconium doping in the range of x=0.0-0.25 was thoroughly analyzed within the framework of first-principles density functional theory from the structural and mechanical point of view. The obtained results were subsequently compared with properties of material deposited by magnetron sputtering method. All predicted structures are mechanically and thermodynamically stable. Due to theoretical calculations zirconium doping reduces hardness and fracture toughness $K_{IC}$ of $WB_2$. Deposited films are characterized by gre…
We present a comprehensive first principles study of doped hafnia in order to understand the formation of the ferroelectric orthorhombic [001] grains. Assuming that tetragonal grains are present during the early stages of growth, matching plane analysis shows that tetragonal [100] grains can transform into orthorhombic [001] during thermal annealing, when they are laterally confined by other grains. We show that among 0%, 2% and %4 Si doping, 4% doping provides the best conditions for the tetragonal [100] to orthorhombic [001] transformation. This also holds for Al doping. We also show that fo…
On the basis of detailed first-principles calculations the anisotropic thermoelectric transport properties of biaxially strained silicon were studied with focus on a possible enhancement of the powerfactor. Electron as well as hole doping were examined in a broad doping and temperature range. In the low-temperature and low-doping regime an enhancement of the powerfactor was obtained for compressive and tensile strain in the electron-doped case and for compressive strain in the hole-doped case. In the thermoelectrically more important high-temperature and high- doping regime a slight enhancemen…
We present a comparative ab initio study of Li, Na, and Mg storage in tin, including phononic effects and phase competition between alpha and beta Sn. Mg doping at low concentration is found to stabilize the beta phase. On the contrary, Li and Na doping is shown to reverse the stability of the phases at room temperature: Li/Na-doped alpha-Sn is more stable than Li/Na-doped beta-Sn up to a temperature of around 380/400 K. This may rationalize the formation of alpha-Sn upon lithiation and delithiation of beta-Sn anodes reported in experimental studies. The changes in phase stability with Li/Na/M…
Titanium dioxide is one of the most widely investigated oxides. This is due to its broad range of applications, from catalysis to photocatalysis to photovoltaics. Despite this large interest, many of its bulk properties have been sparsely investigated using either experimental techniques or ab initio theory. Further, some of TiO2's most important properties, such as its electronic band gap, the localized character of excitons, and the localized nature of states induced by oxygen vacancies, are still under debate. We present a unified description of the properties of rutile and anatase phases, …
Experimentally Cr doping in the rutile phase of VO$_2$ is found to stabilize a charge ordered ferromagnetic insulating state in the doping range of 10\% to 20\%. In this work, we investigated its origin at 12.5\% Cr doping using a combination of ab-initio electronic structure calculations as well as microscopic modeling. Our calculations are found to reproduce the ferromagnetic insulating state as well as a charge ordering at the V and Cr sites. The mapping of the ab-initio band structure onto a tight-binding Hamiltonian allows one to calculate the energy gain from different exchange pathways.…
Ab initio calculations predict that Be is a shallow acceptor in GaN. Its thermal ionization energy is 0.06 eV in wurtzite GaN; the level is valence resonant in the zincblende phase. Be incorporation is severely limited by the formation of Be_3N_2. We show however that co-incorporation with reactive species can enhance the solubility. H-assisted incorporation should lead to high doping levels in MOCVD growth after post-growth annealing at about 850 K. Be-O co-incorporation produces high Be and O concentrations at MBE growth temperatures.
Lewis acids like tris(pentafluorophenyl)borane (BCF) offer promising routes for efficient $p$-doping of organic semiconductors. The intriguing experimental results achieved so far call for a deeper understanding of the underlying doping mechanisms. In a first-principles work, based on state-of-the-art density-functional theory and many-body perturbation theory, we investigate the electronic and optical properties of donor/acceptor complexes formed by quarterthiophene (4T) doped by BCF. For reference, hexafluorobenzene (C$_6$F$_6$) and BF$_3$ are also investigated as dopants for 4T. Modelling t…
Titanium-based oxides are abundant, chemically stable, non-toxic, and highly versatile materials, with applications ranging from photovoltaics to catalysis. For rutile and anatase phases of Titanium dioxide (TiO2), the bandgap ranges from 3.0-3.2 eV, which are too large to absorb in the visible range (400 nm - 700 nm), resulting in poor photo-catalytic efficiency. Nitrogen doping into TiO2 has been able to narrow its bandgap, forming an absorption tail in the visible-light region. However, TiO2 has limits to which it can be doped, suggesting investigations of the oxygen-deficient Ti203. Using …
The transition metal dichalcogenide 1T-TiSe2 is a quasi two-dimensional layered material with a charge density wave (CDW) transition temperature of TCDW 200 K. Self-doping effects for crystals grown at different temperatures introduce structural defects, modify the temperature dependent resistivity and strongly perturbate the CDW phase. Here we study the structural and doping nature of such native defects combining scanning tunneling microscopy/spectroscopy and ab initio calculations. The dominant native single atom dopants we identify in our single crystals are intercalated Ti atoms, Se vacan…
By using first principles calculations we report a chemical doping induced gap in graphene. The structural and electronic properties of CrO$_3$ interacting with graphene layer are calculated using ab initio methods based on the density functional theory. The CrO$_3$ acts as an electron acceptor modifying the original electronic and magnetic properties of the graphene surface through a chemical adsorption. The changes induced in the electronic properties are strongly dependent of the CrO$_3$ adsorption site and for some sites it is possible to open a gap in the electronic band structure. Spin p…
Dependency of energy bandgap (Eg) of bilayer armchair graphene nanoribbons (AGNRB) on their widths, interlayer distance (D) and edge doping concentration of boron/nitrogen is investigated using local density approximation and compare to the results of monolayer graphene nanoribbons (AGNRM). Although Eg of AGNRB, in general, is smaller than that of AGNRM, AGNRB exhibits two distinct groups, metal and semiconductor, while AGNRM displays purely semiconducting behavior. Eg of AGNRB, moreover, is highly sensitive to D, indicating a possible application in tuning Eg by varying D. Finally, edge dopin…
We investigate the compositional dependence of the total energy of the mixed crystals (Ga,Mn)As co-doped with As, Sn, and Zn. Using the ab initio LMTO-CPA method we find a correlation between the incorporation of acceptors (Mn, Zn) and donors (Sn, antisite As). In particular, the formation energy of As_Ga is reduced by approx. 0.1 eV in the presence of Mn, and vice versa. This leads to the self-compensating behavior of (Ga,Mn)As.
We present a detailed ab-initio study of semi-classical transport in n-ZnSe using Rode's iterative method. Inclusion of ionized impurity, piezoelectric, acoustic deformation and polar optical phonon scattering and their relative importance at low and room temperature for various n-ZnSe samples are discussed in depth. We have clearly noted that inelastic polar optical phonon scattering is the most dominant scattering mechanism over most of the temperature region. Our results are in good agreement with the experimental data for the mobility and conductivity obtained at different doping concentra…
Zincblende copper iodide has been attracting growing interest as p-type semiconductor for applications in transparent electronics and transparent thermoelectrics. A key step towards technological applications is the possibility to enhance copper iodide (CuI) conductivity by doping without deteriorating transparency. A recent high-throughput computational study revealed that chalcogen substitutions on iodine sites can act as shallow acceptors. Following computational predictions, doping by oxygen, sulfur and selenium substitutions on iodine sites has recently been realized in the laboratory, sh…
We present an ab initio calculation of the DC conductivity of amorphous silicon and hydrogenated amorphous silicon. The Kubo-Greenwood formula is used to obtain the DC conductivity, by thermal averaging over extended dynamical simulation. Its application to disordered solids is discussed. The conductivity is computed for a wide range of temperatures and doping is explored in a naive way by shifting the Fermi level. We observed the Meyer-Neldel rule for the electrical conductivity with E_MNR = 0.06 eV and a temperature coefficient of resistance, TCR ~ -2.0% K^-1 for a-Si:H. In general, experime…
We present a first-principles study of semiconducting carbon nanotubes adsorbed on the unpassivated Si(100) surface. We have found metallicity for the combined system caused by n-doping of the silicon slab representing the surface by the SWNT. We confirm this metallicity for nanotubes of different diameters and chiral angles, and find the effect to be independent of the orientation of the nanotubes on the surface. We also present adsorption energetics and configurations which show semiconducting SWNTs farther apart from the surface and transferring less charge, in comparison with metallic SWNT…
We report on a theoretical study of the electronic, optical and magneto-optical properties of digital ferromagnetic hetero-structures based on $Mn$ $δ$--doped $GaAs$. We consider different structures corresponding to $Mn$ contents within the range 12-50\% and we study how the system changes as a function of the doping concentration. Our first--principles approach includes the spin-orbit interaction in a fully relativistic pseudopotential scheme and the local fields effect in the description of the optical absorption. We show that $Mn$ $δ$-doped $GaAs$ shares many properties with the uniformly …
In this paper, we have analysed the electronic and mechanical properties of Nitrogen(N) doped (6,1) SWCNTs based on first-principles and Molecular dynamic (MD) simulation. A schematic N-doping on SWCNT was performed along zigzag(zz) and armchair(ac) direction. Armchair doping is considered parallel to the tube axis while the zigzag is along the cross-section perpendicular to the tube axis. In doping pattern (both zz and ac) we have observed the variation in electronic properties for even number of N-doping and odd number of N-doping. To study the mechanical properties we have adopted ab-initio…
We present here results of our first principles studies of the sulfur doping effects on the electronic and geometric structures of graphitic carbon nitride (g-C3N4). Using the Ab initio thermodynamics approach combined with some kinetic analysis, we reveal the favorable S-doping configurations By analyzing the valence charge densities of the doped and un-doped systems, we find that sulfur partially donates its px- and py- electrons to the system with some back donation to the S pz-states. To obtain accurate description of the excited electronic states, we calculate the electronic structure of …
The electronic and optical properties of the paradigmatic F4TCNQ-doped pentacene in the low-doping limit are investigated by a combination of state-of-the-art many-body \emph{ab initio} methods accounting for environmental screening effects, and a carefully parametrized model Hamiltonian. We demonstrate that while the acceptor level lies very deep in the gap, the inclusion of electron-hole interactions strongly stabilizes dopant-semiconductor charge transfer states and, together with spin statistics and structural relaxation effects, rationalize the possibility for room-temperature dopant ioni…
An ab initio study of the doping of alkali halide crystals (AX: A = Li, Na, K, Rb; X = F, Cl, Br, I) by ns2 anions (Ag- and Cu-) is presented. Large active clusters with 179 ions embedded in the surrounding crystalline lattice are considered in order to describe properly the lattice relaxation induced by the introduction of substitutional impurities. In all the cases considered, the lattice distortions imply the concerted movement of several shells of neighbors. The shell displacements are smaller for the smaller anion Cu-, as expected. The study of the family of rock-salt alkali halides (exce…
The geometrical and electronic structure of tripotassium doped phenanthrene, \ce{K3C14H10}, have been studied by first-principles density functional theory. The main effect of potassium doping is to inject charge in the narrow phenanthrene conduction band, rendering the system metallic. The Fermi surface for the experimental X-rays unit cell is composed of two sheets with marked one and two dimensional character respectively.
Ab initio Investigations on the Electronic Properties and Stability of Cu-Substituted Lead Apatite (LK-99) family with different doping concentrations (x=0, 1, 2)
We present the first ab-initio band-theory-based description of spin-compensated polarons (known as Zhang-Rice singlets) in a hole-doped cuprate, specifically one-dimensional Ca_{2+x} Y_{2-x} Cu_5 O_10. Zhang-Rice singlets are many-particle configurations relevant to the exotic behavior of hole-doped cuprates, stemming from spontaneous charge localization. They appear in our case-study material above a threshold doping, successively turning the insulating undoped antiferromagnet into a gap insulator, a singlet-rich metallic paramagnet, and finally, a singlet-saturated insulating diamagnet.
We employ ab-initio electronic structure calculations and study the magnetic properties of CaN and SrN compounds crystallizing in the rocksalt structure. These alkaline-earth metal mononitrides are found to be half-metallic with a total spin magnetic moment per formula unit of 1.0 $μ_B$. The Curie temperature is estimated to be 480 K for CaN and 415 K for SrN well-above the room temperature. Upon small degrees of doping with holes or electrons, the rigid-band model suggests that the magnetic properties are little affected. Finally we studied for these alloys the effect of deformation taking in…
Understanding the detailed electronic structure of deep defect states in narrow band-gap semiconductors has been a challenging problem. Recently, self-consistent ab initio calculations within density functional theory (DFT) using supercell models have been successful in tackling this problem. In this paper, we carry out such calculations in PbTe, a well-known narrow band-gap semiconductor, for a large class of defects: cationic and anionic substitutional impurities of different valence, and cationic and anionic vacancies. For the cationic defects, we study a series of compounds RPb2n-1Te2n, wh…
Ab-initio calculations have been performed to study the geometry and electronic structure of boron (B) and nitrogen (N) doped graphene sheet. The effect of doping has been investigated by varying the concentrations of dopants from 2 % (one atom of the dopant in 50 host atoms) to 12 % (six dopant atoms in 50 atoms host atoms) and also by considering different doping sites for the same concentration of substitutional doping. All the calculations have been performed by using VASP (Vienna Ab-initio Simulation Package) based on density functional theory. By B and N doping p-type and n-type doping i…
Using advanced ab-initio calculations, we describe the formation and confinement of a two-dimensional electron gas in short-period ($\simeq$4 nm) Nb-doped SrTiO$_3$ superlattices as function of Nb doping. We predict complete two-dimensional confinement for doping concentrations higher than 70%. In agreement with previous observations, we find a large thermopower enhancement at room temperature. However, this effect is primarily determined by dilution of the mobile charge over a multitude of weakly occupied bands. As a general rule, we conclude that thermopower in similar heterostructures will …
A key challenge in manipulating the magnetization in heavy-metal/ferromagnetic bilayers via the spin-orbit torque is to identify materials that exhibit an efficient charge-to-spin current conversion. Ab initio electronic structure calculations reveal that the intrinsic spin Hall conductivity (SHC) for pristine $β$-W is about sixty percent larger than that of $α$-W. More importantly, we demonstrate that the SHC of $β$-W can be enhanced via Ta alloying. This is corroborated by spin Berry curvature calculations of W$_{1-x}$Ta$_x$ ($x$ $\sim$ 12.5%) alloys which show a giant enhancement of spin Ha…
Using the ab initio FLAPW-GGA method we examine the electronic and magnetic properties of nitrogen-doped non-magnetic sesquioxide La2O3 emphasizing the role of doping sites in the occurrence of d0-magnetism. We predict the magnetization of La2O3 induced by nitrogen impurity in both octahedral and tetrahedral sites of the oxygen sublattice. The most interesting results are that (i) the total magnetic moments (about 1 μB per supercells) are independent of the doping site, whereas (ii) the electronic spectra of these systems differ drastically: La2O3:N with six-fold coordinated nitrogen behaves a…
Using a combination of {\it ab initio} bandstructure methods and dynamical mean-field theory we study the single-particle spectrum of the prototypical charge-transfer insulator NiO. Good agreement with photoemission and inverse-photoemission spectra is obtained for both stoichiometric and hole-doped systems. In spite of a large Ni-$d$ spectral weight at the top of the valence band the doped holes are found to occupy mainly the ligand $p$ orbitals. Moreover, high hole doping leads to a significant reconstruction of the single-particle spectrum accompanied by a filling of the correlation gap.
Substitutionally-doped 2D transition metal dichalcogenides are primed for next-generation device applications such as field effect transistors (FET), sensors, and optoelectronic circuits. In this work, we demonstrate substitutional Rhenium (Re) doping of MoS2 monolayers with controllable concentrations down to 500 parts-per-million (ppm) by metal-organic chemical vapor deposition (MOCVD). Surprisingly, we discover that even trace amounts of Re lead to a reduction in sulfur site defect density by 5-10x. Ab initio models indicate the free-energy of sulfur-vacancy formation is increased along the…
Herein, we performed ab initio screening to identify the best doping of LiNiO2 to achieve improved cycle performance in lithium ion batteries. The interlayer interaction that dominates the c-axis contraction and overall performance was captured well by density functional theory using van der Waals exchange-correlation functionals. The screening indicated that Nb-doping is promising for improving cycle performance. To extract qualitative reasonings, we performed data analysis in a materials informatics manner to obtain a reasonable regression to reproduce the obtained results. LASSO analysis im…
We present a new first-principles linear-response theory of changes due to perturbations in the quasiparticle self-energy operator within the $GW$ method. This approach, named $GW$ perturbation theory ($GW$PT), is applied to calculate the electron-phonon ($e$-ph) interactions with the full inclusion of the $GW$ non-local, energy-dependent self-energy effects, going beyond density-functional perturbation theory. Avoiding limitations of the frozen-phonon technique, $GW$PT gives access to $e$-ph matrix elements at the $GW$ level for all phonons and scattering processes, and the computational cost…
We use ab initio methods and neutron inelastic scattering (NIS) to study the structure, energetics, and dynamics of pure and Ti-doped sodium alanate (NaAlH_4), focusing on the possibility of substitutional Ti doping. The NIS spectrum is found to exhibit surprisingly strong and sharp two-phonon features. The calculations reveal that substitutional Ti doping is energetically possible. Ti prefers to substitute for Na and is a powerful hydrogen attractor that facilitates multiple Al--H bond breaking. Our results hint at new ways of improving the hydrogen dynamics and storage capacity of the alanat…
We report the results of \textit{ab initio} simulations of the electronic properties of a chain of C$_{60}$ molecules encapsulated in a boron nitride nanotube - so called BN-nanopeapod. It is demonstrated that this structure can be effectively doped by depositing potassium atoms on the external wall of the BN-nanotube. The resulting material becomes a true metallic one-dimensional crystal, where the conduction states are formed solely by the fullerene chain. At the doping rate of one K atom per C$_{60}$ molecule, the system shows the density of states at the Fermi level considerably higher tha…
We have performed {\it ab-initio} electronic structure calculations to determine the evolution of the electronic structure of WO$_3$ with Na doping. Na doping introduces an additional electron when introduced into WO$_3$. The ensuing electronic structure of Na doped WO$_3$, we find, is very similar to the electronic structure of an electron introduced into WO$_3$, thus clarifying the role of the impurity potential due to Na. While the electronic structure of NaWO$_3$ allows a rigid band like description over a certain energy range, modifications introduced in the electronic structure can be re…
In the present work we study the effect of nitrogen (N) and fluorine (F) doping in the electronic properties of ZrO$_2$ by using \emph{ab initio} electronic structure calculations. Our calculations show the importance of on-site Coulomb correlation in estimating the correct band gap of ZrO$_2$. The N and F doping provide hole and electron type impurity states in the band gap closer to the top of the valance band and bottom of the conduction band, respectively. The formation of such impurity states may be exploited in fabricating a $p$-$n$ junction expected to be useful in making an ultraviolet…
CoCr$_2$O$_4$ has attracted significant attention recently due to several interesting properties such as magnetostriction, magnetoelectricity etc.. More recent experiments on Fe substituted CoCr$_2$O$_4$ observed a variety of novel phenomena such as the magnetic compensation accompanied by the occurrence of exchange bias, which reverses its sign. Understanding of such phenomena may lead to control the properties of these material in an efficient way to enhance its potential for multifunctional applications. In this paper, we study the microscopic understanding of Fe doping in modifying the str…
