arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 0806.0095cond-mat.str-elcond-mat.mtrl-sci
收藏

低密度过渡金属杂质半导体中杂质间和杂质-基质磁关联

Inter-impurity and impurity-host magnetic correlations in semiconductors with low-density transition-metal impurities

Yoshihiro Tomoda, Nejat Bulut, Sadamichi Maekawa

摘要:

在低掺杂绝缘相的(Ga,Mn)As的实验表明,在价带以上110 meV的杂质带的存在的证据。本文的目的是研究杂质带在决定稀磁半导体低掺杂区磁关联中的作用。为此,我们提出的Haldane-Anderson模型的过渡金属杂质在半导体主机,这是通过使用Hirsch-Fye量子蒙特卡罗(QMC)算法得到的结果。特别是,我们目前的结果杂质杂质和杂质主机磁关联在二维和三维半导体二次带色散。此外,我们利用紧束缚近似和实验确定的参数,得到了GaAs中Mn杂质的宿主能带结构和杂质-宿主杂化。当化学势位于价带顶和杂质束缚态之间时,杂质表现出最长射程的铁磁关联。我们表明,这些FM相关产生的反铁磁耦合的主机电子自旋杂质磁矩。最后,我们得到了100 meV的IBS能量,这是一致的实验值为110 meV,通过结合QMC技术与紧束缚的方法在GaAs中的Mn杂质。

英文摘要:

Experiments on (Ga,Mn)As in the low-doping insulating phase have shown evidence for the presence of an impurity band at 110 meV above the valence band. The motivation of this paper is to investigate the role of the impurity band in determining the magnetic correlations in the low-doping regime of the dilute magnetic semiconductors. For this purpose, we present results on the Haldane-Anderson model of transition-metal impurities in a semiconductor host, which were obtained by using the Hirsch-Fye Quantum Monte Carlo (QMC) algorithm. In particular, we present results on the impurity-impurity and impurity-host magnetic correlations in two and three-dimensional semiconductors with quadratic band dispersions. In addition, we use the tight-binding approximation with experimentally-determined parameters to obtain the host band structure and the impurity-host hybridization for Mn impurities in GaAs. When the chemical potential is located between the top of the valence band and the impurity bound state (IBS), the impurities exhibit ferromagnetic (FM) correlations with the longest range. We show that these FM correlations are generated by the antiferromagnetic coupling of the host electronic spins to the impurity magnetic moment. Finally, we obtain an IBS energy of 100 meV, which is consistent with the experimental value of 110 meV, by combining the QMC technique with the tight-binding approach for a Mn impurity in GaAs.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑