太阳大气中硅的统计平衡
Statistical equilibrium of silicon in the solar atmosphere
摘要：
本文研究了太阳光球层中中性硅和电离硅的统计平衡。线的形成进行了讨论，并确定了太阳硅丰度。高分辨率的太阳光谱被用来确定太阳$\log gfε_{\rm Si}$值与Si线合成的基础上LTE和NLTE水平的人口进行比较。研究结果将用于即将发表的一篇论文，用于贫金属恒星的差异丰度分析。硅线光谱的详细分析导致建立现实的模型原子，暴露在平面平行太阳大气模型的相互作用。由此产生的偏离系数输入到可见光和近红外太阳硅光谱的逐线分析。\ion{Si}{i}的统计平衡，原来是轻微地依赖于束缚-自由相互作用过程，辐射和碰撞。束缚-束缚相互作用过程也不起重要作用，除了氢碰撞，氢碰撞必须适当地选择以拟合近红外线的核心。除部分近红外谱线外，NLTE对丰度的影响较弱。考虑到硅中LTE的偏差，可以从中性线和电离线计算电离平衡。太阳丰度的基础上的实验$f$ -值的Garz校正贝克尔等人。的测量值为$7.52 \pm 0.05$。结合具有选定NIST $f$ -值的延长线样本，太阳丰度为$7.52 \pm 0.06$，具有接近完美的电离平衡$Δ\logε_\odot(\ion{Si}{ii}/\ion{Si}{i}) = -0.01$。
英文摘要：
The statistical equilibrium of neutral and ionised silicon in the solar photosphere is investigated. Line formation is discussed and the solar silicon abundance determined. High-resolution solar spectra were used to determine solar $\log gfε_{\rm Si}$ values by comparison with Si line synthesis based on LTE and NLTE level populations. The results will be used in a forthcoming paper for differential abundance analyses of metal-poor stars. A detailed analysis of silicon line spectra leads to setting up realistic model atoms, which are exposed to interactions in plane-parallel solar atmospheric models. The resulting departure coefficients are entered into a line-by-line analysis of the visible and near-infrared solar silicon spectrum. The statistical equilibrium of \ion{Si}{i} turns out to depend marginally on bound-free interaction processes, both radiative and collisional. Bound-bound interaction processes do not play a significant role either, except for hydrogen collisions, which have to be chosen adequately for fitting the cores of the near-infrared lines. Except for some near-infrared lines, the NLTE influence on the abundances is weak. Taking the deviations from LTE in silicon into account, it is possible to calculate the ionisation equilibrium from neutral and ionised lines. The solar abundance based on the experimental $f$-values of Garz corrected for the Becker et al.'s measurement is $7.52 \pm 0.05$. Combined with an extended line sample with selected NIST $f$-values, the solar abundance is $7.52 \pm 0.06$, with a nearly perfect ionisation equilibrium of $Δ\logε_\odot(\ion{Si}{ii}/\ion{Si}{i}) = -0.01$.
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