Ge2Sb2Te5纳米柱临界相变条件的标度特性
Scaling Properties of Critical Phase Change Conditions in Ge2Sb2Te5 Nanopillars
摘要：
我们已经测量了临界相变条件的电脉冲在Ge2Sb2Te5纳米柱相变存储器件通过构建一个全面的电阻图作为脉冲参数（宽度，幅度和后沿）的函数。我们的测量结果表明，冷却方案和接触几何形状的细节在确定设备的最终相组成中起着主导作用。的电热物理的三维有限元模型不仅提供了良好的洞察的基本物理机制的开关动力学，但也定量占所观察到的缩放行为。
英文摘要：
We have measured the critical phase change conditions induced by electrical pulses in Ge2Sb2Te5 nanopillar phase change memory devices by constructing a comprehensive resistance map as a function of pulse parameters (width, amplitude and trailing edge). Our measurements reveal that the cooling scheme and the details of the contact geometry play the dominant role in determining the final phase composition of the device. A three-dimensional finite element model of the electro-thermal physics not only provides good insights into the underlying physical mechanisms of the switching dynamics but also quantitatively accounts for the observed scaling behaviour.
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