Rongwei Hu, V. F. Mitrovic, C. Petrovic
We report the giant carrier mobility in single crystals of FeSb2. Nonlinear field dependence of Hall resistivity is well described with the two-carrier model. Maximum mobility values in high mobility band reach ~10^5 cm^2/Vs at 8 K, and are ~10^2 cm^2/Vs at the room temperature. Our results point to a class of materials with promising potential for applications in solid state electronics.
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Since the discovery of two-dimensional electron gas (2DEG) at the oxide interface of LaAlO3/SrTiO3, improving carrier mobility has become an important issue for device applications. In this paper, by using an alternate polar perovskite insulator (La0.3Sr0.7)(Al0.65Ta0.35)O3 (LSAT) for reducing lattice mismatch from 3.0% to 1.0%, the low-temperature carrier mobility has been increased 30 fold to 35,000 cm2V-1s-1. Moreover, two critical thicknesses for the LSAT/SrTiO3 (001) interface are found: one at 5 unit cell for appearance of the 2DEG, the other at 12 unit cell for a peak in the carrier mob…
First-principles carrier mobility and optical absorption of strained ZnO with self-consistent Hubbard interactions
研究采用DFPT+U方法计算应变ZnO的载流子迁移率与光吸收，发现[1̄10]方向4.8%单轴拉伸应变可提升室温电子迁移率19%且不影响可见光吸收，证明适度应变可优化其性能。
We show that the temperature dependence of conductivity of high mobility organic crystals Pentacene and Rubrene can be quantitatively described in the framework of the model where carriers are scattered by quenched local impurities and interact with phonons by Su-Schrieffer-Hegger (SSH) coupling. Within this model, we present approximation free results for mobility and optical conductivity obtained by world line Monte Carlo, which we generalize to the case of coupling both to phonons and impurities. We find fingerprints of carrier dynamics in these compounds which differ from conventional meta…
Emergence of high-mobility carriers in topological kagome bad metal Mn$_3$Sn by intense photoexcitation
本文利用时间分辨太拉赫兹法拉第旋转光谱，发现强光激发使拓扑Kagome劣金属Mn$_3$Sn涌现出高迁移率载流子，其有效质量与散射大幅降低，该现象源于光生载流子对库仑相互作用的介电屏蔽。
Dirac/Weyl semimetals hosting linearly-dispersing bands have received recent attention for potential thermoelectric applications, since their ultrahigh-mobility carriers could generate large thermoelectric and Nernst power factors. To optimize these efficiencies, the Fermi energy needs to be chemically controlled in a wide range, which is generally difficult in bulk materials because of disorder effects from the substituted ions. Here it is shown that the Fermi energy is tunable across the Dirac point for layered magnet EuMnBi$_2$ by partially substituting Gd$^{3+}$ for Eu$^{2+}$ in the insula…
First-principle quantum Monte-Carlo study of charge carrier mobility in organic molecular semiconductors
该研究针对有机分子半导体电荷输运问题，用无可调参数的Hybrid Monte Carlo算法结合多项算法改进，以低计算成本高精度模拟声子与载流子量子动力学，所得迁移率与实验吻合且验证了瞬态局域化方法。
We calculate the mobility of a heavy particle coupled to a Fermi sea within a non-perturbative approach valid at all temperatures. The interplay of particle recoil and of strong coupling effects, leading to the orthogonality catastrophe for an infinitely heavy particle, is carefully taken into account. We find two novel types of strong coupling effects: a new low energy scale $T^{\star}$ and a giant mass renormalization in the case of either near-resonant scattering or a large transport cross section $σ$. The mobility is shown to obey two different power laws below and above $T^{\star}$. For $…
We have found that there is more than one type of conducting carriers generated in LaAlO3/SrTiO3 heterostructures by comparing the sheet carrier density and mobility from optical transmission spectroscopy with those from dc-transport measurements. When multiple types of carriers exist, optical characterization dominantly reflects the contribution from the high-density carriers whereas dc-transport measurements may exaggerate the contribution of the high-mobility carriers even though they are present at low-density. Since the low-temperature mobilities determined by dc-transport in the LaAlO3/S…
Paraelectrical tuning of a charge carrier density as high as 10$^{13}$\,cm$^{-2}$ in the presence of a high electronic carrier mobility on the delicate surfaces of correlated oxides, is a key to the technological breakthrough of a field effect transistor (FET) utilising the metal-nonmetal transition. Here we introduce the Parylene-C/Ta$_{2}$O$_{5}$ hybrid gate insulator and fabricate FET devices on single-crystalline SrTiO$_{3}$, which has been regarded as a bedrock material for oxide electronics. The gate insulator accumulates up to $\sim10^{13}$cm$^{-2}$ carriers, while the field-effect mobi…
We present de Haas-van Alphen and resistivity data on single crystals of the delafossite PdCoO2. At 295 K we measure an in-plane resistivity of 2.6 μΩ-cm, making PdCoO2 the most conductive oxide known. The low-temperature in-plane resistivity has an activated rather than the usual T^5 temperature dependence, suggesting a gapping of effective scattering that is consistent with phonon drag. Below 10 K, the transport mean free path is 20 \mum, approximately 10^5 lattice spacings and an astoundingly high value for flux-grown crystals. We discuss the origin of these properties in light of our data.
Weak antilocalization (WAL) effects in Bi2Te3 single crystals have been investigated at high and low bulk charge carrier concentrations. At low charge carrier density the WAL curves scale with the normal component of the magnetic field, demonstrating the dominance of topological surface states in magnetoconductivity. At high charge carrier density the WAL curves scale with neither the applied field nor its normal component, implying a mixture of bulk and surface conduction. WAL due to topological surface states shows no dependence on the nature (electrons or holes) of the bulk charge carriers.…
The two-dimensional organic conductor $α$-(BEDT-TTF)$_2$I$_3$ undergoes a metal-insulator transition at $T_{\rm CO}=135$ K due to electronic charge ordering. We have conducted time-resolved investigations of its electronic properties in order to explore the field- and temperature-dependent dynamics. At a certain threshold field, the system switches from low-conducting to a high-conducting state, accompanied by a negative differential resistance. Our time-dependent infrared investigations indicate that close to $T_{\rm CO}$ the strong electric field pushes the crystal into a metallic state with…
How to accurately measure the mobility and viscosity of two-dimensional carriers?
本文提出两种方法准确测量二维载流子迁移率和粘度，通过无滑移边界条件下的流体动力学模型分析实验数据，揭示低温下电子散射时间的异常行为。
With infrared ellipsometry we studied the response of the confined electrons in a $γ$-Al$_2$O$_3$/SrTiO$_3$ heterostructures in which they originate predominantly from oxygen vacancies. From the analysis of a so-called Berreman mode, that develops near the highest longitudinal optical phonon mode of SrTiO$_3$, we derive the sheet carrier density, ${N_{s}}$, the mobility, $μ$, and also the depth profile of the carrier concentration. Notably, we find that ${N_{s}}$ and the shape of the depth profile are similar as in LaAlO$_3$/SrTiO$_3$ heterostructures for which the itinerant carriers are belie…
Unconventional high temperature superconductivity as well as three-dimensional bulk Dirac cone quantum states arising from the unique d-orbital topology has been a recent priority research area in physics. In iron pnictide compounds, although transport phenomena arisen from this multiple band Fermi surface are intriguing and scientifically important, they still do not give an adequate matching to neither experimental observations on the band picture nor theoretical calculations and a debate continues. Here we describe a new analytical approach of mobility spectrum, in which the carrier number …
Superlinear Hall angle and carrier mobility from non-Boltzmann magnetotransport in the spatially disordered Yukawa-Sachdev-Ye-Kitaev model on a square lattice
本文通过自洽无序平均解研究二维空间无序Yukawa-Sachdev-Ye-Kitaev模型在垂直磁场下的直流磁导率张量，发现温度和YSYK相互作用强度下磁输运系数非平凡演变，特别是Hall角余切和载流子迁移率的超线性温度依赖性，伴随线性温度电阻率。
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